1N4148WSF SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data Fast Switching Speed Case: SOD323F Low Forward Voltage: Maximum of 0.715V at 1mA Case Material: Molded Plastic, Green Molding Compound. UL Fast Reverse Recovery: Maximum of 4ns Flammability Classification Rating 94V-0 Low Capacitance: Maximum of 1.5pF Moisture Sensitivity: Level 1 per J-STD-020 Low Leakage Current: Maximum of 500nA at 80V Terminals: Matte Tin Finish annealed over Copper Alloy leadframe Small Surface Mount Package (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Thermally Efficient Copper Alloy leadframe for High Power Weight: 0.003 grams (approximate) Dissipation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) SOD323F Top View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel 1N4148WSF-7 Standard JP 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See 1N4148WSF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 71 V R(RMS) Forward Continuous Current (Note 5) I 250 mA FM t = 1.0s 4.0 Non-Repetitive Peak Forward Surge Current t = 1.0ms A I 1.0 FSM 0.5 t = 1.0s Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 400 mW P D Thermal Resistance Junction to Ambient Air (Note 5) R 313 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 100 V I = 100A (BR)R R I = 1.0mA 0.715 F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F V = 80V 0.5 A R 50 A V = 80V, T = +150C R J Leakage Current (Note 6) I R 30 A V = 25V, T = +150C R J 30 nA V = 25V R Total Capacitance 1.5 pF C V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 2 of 4 September 2013 1N4148WSF Diodes Incorporated www.diodes.com Document number: DS36010 Rev. 4 - 2 NEW PRODUCT