AP9060FM8-7 Diodes Incorporated

AP9060 OVERVOLTAGE CLAMP Description Pin Assignments AP9060 is designed to protect the latest generation of PMICs for W-DFN1114-3 portable applications such as Smartphones, UMPCs and others that utilize battery power. 1 The device, with its integrated low resistance p-channel MOSFET, 3 operates as a switch and passes the input voltage through to the output till the input reaches a clamp voltage limit. Once V goes IN 2 above the clamp limit, which is set to 11.15V, the output voltage gets Top View clamped and the feedback loop maintains the clamped V by OUT reducing the drive to the p-channel FET. The output voltage is clamped at 11.15V to ensure that a following PMIC can detect a faulty charger and ensure safe and proper communication to the system. AP9060 also supports reverse operation whereby it can pass up to 1A of current from the PMIC to the load connected to the USB port. This makes AP9060 suitable for USB On-The-Go enabled devices. The AP9060 protection device is available in a low-profile W-DFN1114-3 package with a typical height of 0.8mm. Features Wide Input Voltage Range of 3V 30V Ultra-Low Bias Current Applications Integrated Low On-Resistance P-Channel FET Power Interface for New Generation PMICs Output Voltage Clamped at 11.15V Charger Front-End Protection PMOS Protection Mechanism Removes EMI Issues Typically Smartphones Associated with an NMOS Solution UMPC Supports Reverse Current Operation (USB OTG) Portable Applications Available in a W-DFN1114-3 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See AP9060 Pin Descriptions Pin Pin Function Number Name 1 VIN Input voltage to the device. 2 GND System ground. 3/PAD VOUT Output loltage, which follows V and gets clamped if V exceeds the clamp voltage of 11.15V (typ). IN IN Functional Block Diagram Figure 2 Functional Block Diagram Absolute Maximum Ratings (Note 4) ( T = +25C, unless otherwise specified.) A Symbol Parameter Rating Unit V Input Supply Voltage -0.3 to +30 V IN Maximum Continuous Switch Current (Note 6) 2.6 I T = +25C A MAX A 1.6 T = +85C A P Power Dissipation T = +25C (Note 6) 1.1 W D A T Junction Temperature Range -40 to +125 C J T Storage Temperature Range -55 to +150 C STG T Maximum Lead Temperature for Soldering Purposes 260 C L ESD Susceptibility (Note 5) HBM Human Body Model 8.0 kV MM Machine Model 350 V Notes: 4. Stresses greater than the Absolute Maximum Ratings specified above may cause permanent damage to the device. These are stress ratings only functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 5. Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling and transporting these devices. 2 of 9 August 2012 AP9060 Diodes Incorporated www.diodes.com Document number: DS36001 Rev. 2 - 2 NEW PRODUCT