BAS16TW-7-F Diodes Incorporated

MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT363 Ultra-Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. For General Purpose Switching Applications UL Flammability Classification Rating 94V-0 High Conductance Moisture Sensitivity: Level 1 per J-STD-020D Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Matte Tin Finish annealed over Alloy 42 leadframe e3 Halogen and Antimony Free. Green Device (Note 3) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.006 grams (approximate) SOT363 C C C 1 2 3 A A A 1 2 3 TOP VIEW TOP VIEW Internal Schematic Ordering Information (Note 4) Part Number Case Packaging MMBD4148TW-7-F SOT363 3000/Tape & Reel BAS16TW-7-F SOT363 3000/Tape & Reel BAS16TW-13-F SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBD4148TW / BAS16TW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 75 V RWM DC Blocking Voltage V R RMS Reverse Voltage 53 V V R(RMS) Forward Continuous Current (Note I 300 mA FM 51) Average Rectified Output Current (Note I 150 mA O 51) Non-Repetitive Peak Forward Surge Current t = 1.0s 2.0 I A FSM t = 1.0s 1.0 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance Junction to Ambient Air (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 75 V V I = 1A (BR)R R I = 1.0mA 0.715 F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F V = 75V R 1.0 A 50 A V = 75V, T = +150C R J Reverse Current (Note 6) I R 30 A V = 25V, T = +150C R J 25 nA V = 20V R Total Capacitance C 2.0 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at