BAS16VA SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT563 Low Forward Voltage: Maximum of 0.715V at 1mA Case Material: Molded Plastic, Green Molding Compound. Fast Reverse Recovery: Maximum of 4ns UL Flammability Classification Rating 94V-0 Low Capacitance: Maximum of 1.5pF Moisture Sensitivity: Level 1 per J-STD-020 Low Leakage Current Terminals: Matte Tin Finish Annealed over Copper Alloy Lead- Ultra-Small Surface Mount Package Frame (Lead Free Plating). Solderable per MIL-STD-202, Thermally Efficient Copper Alloy Leadframe for High Power Method 208 Dissipation Weight: 0.003 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. BAS16VA Maximum Ratings ( T = 25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 71 V R(RMS) Forward Continuous Current (Note 5) I 200 mA FM t = 1.0s 4.0 t = 1.0ms Non-Repetitive Peak Forward Surge Current I 1.0 A FSM 0.5 t = 1.0s Thermal Characteristics ( T = 25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 350 mW D Thermal Resistance Junction to Ambient Air (Note 5) 357 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = 25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 100 V I = 100A (BR)R R 0.715 IF = 1.0mA 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F 0.5 A V = 80V R 50 A V = 80V, T = 125C R J Leakage Current (Note 6) IR 30 A V = 25V, T = 125C R J 30 nA V = 25V R Total Capacitance C 1.5 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time 4.0 ns trr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PCB, on minimum recommended 2oz copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 November 2020 BAS16VA Diodes Incorporated www.diodes.com Document number: DS40600 Rev. 3 - 2 NEW PRODUCT