BAS16VV SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT563 Low Forward Voltage: Maximum of 0.715V at 1mA Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Reverse Recovery: Maximum of 4ns Moisture Sensitivity: Level 1 per J-STD-020 Low Capacitance: Maximum of 1.5pF Terminals: Matte Tin Finish annealed over Copper Alloy Low Leakage Current leadframe (Lead Free Plating). Solderable per MIL-STD-202, Ultra-Small Surface Mount Package Method 208 Thermally Efficient Copper Alloy leadframe for High Power Weight: 0.003 grams (approximate) Dissipation Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) SOT563 Top View Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging BAS16V V-7 SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAS16VV Maximum Ratings ( T = 25C unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 100 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 71 V R(RMS) Forward Continuous Current (Note 5) I 200 mA FM 4.0 t = 1.0s Non-Repetitive Peak Forward Surge Current t = 1.0ms I 1.0 A FSM t = 1.0s 0.5 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 350 mW D Thermal Resistance Junction to Ambient Air (Note 5) 357 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = 25C unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 100 V V I = 100A (BR)R R 0.715 I = 1.0mA F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F 0.5 A V = 80V R 50 A V = 80V, T = 150C R J Leakage Current (Note 6) I R 30 A V = 25V, T = 150C R J 30 nA V = 25V R Total Capacitance 1.5 pF C V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 1 350 300 Note 5 250 0.1 200 150 0.01 100 50 R = 357C/W JA 0 0.001 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (V) A F Fig. 2 Typical Forward Characteristics, Per Element Fig. 1 Power Derating Curve, Total Package 2 of 4 June 2012 BAS16VV Diodes Incorporated www.diodes.com Document number: DS35791 Rev. 3 - 2 P , POWER DISSIPATION (mW) D I, INSTANTANEOUS FORWARD CURRENT (A) F