BAS21DWA HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data Fast Switching Speed Case: SOT353 Surface Mount Package Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound High Reverse Breakdown Voltage Rating UL Flammability Classification Rating 94V-0 ESD: MM 400V and HBM 4kV Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Halogen and Antimony Free. Green Device (Note 3) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Polarity: See Diagram PPAP Capable (Note 4) Weight: 0.006 grams (Approximate) 5 4 SOT353 1 NC 3 Top View Bottom View Ordering Information (Note 5) Part Number Compliance Case Packaging BAS21DWA-7 AEC-Q101 SOT353 3,000/Tape & Reel BAS21DWAQ-7 Automotive SOT353 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. 2. See BAS21DWA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage V 250 V RRM Working Peak Reverse Voltage V RWM 250 V DC Blocking Voltage V R RMS Reverse Voltage 175 V V R(RMS) Forward Continuous Current (Note 6) 200 mA I F Peak Repetitive Forward Current (Note 6) 625 mA I FRM Non-Repetitive Peak Forward Surge Current t = 1.0s 4.0 A I FSM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 285 mW P D Thermal Resistance Junction to Ambient Air (Note 6) 435 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 250 V I = 100A (BR)R R 0.90 I = 20mA F 1.05 Forward Voltage V V I = 100mA F F 1.3 I = 200mA F V = 200V 30 100 nA R Reverse Current (Note 7) I R 35 100 A V = 200V, T = +150C R J Total Capacitance 0.7 5.0 pF C V = 0V, f = 1.0MHz T R I = I = 30mA, F R Reverse Recovery Time t 50 ns rr I = 3.0mA, R = 100 rr L Notes: 6. Part mounted on FR-4 substrate with pad dimensions 1 inch x 1 inch, 2oz, copper, single-sided, PC board. 7. Short duration pulse test used to minimize self-heating effect. 350 1000 300 100 Note 6 250 T = 150C A 10 200 T = 125C A 1 150 T = 85C A 0.1 100 T = 25C A 0.01 50 T = -55C A 0.001 0 0 200 400 600 800 1000 1200 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) V , INSTANTANEOUS FORWARD VOLTAGE (mV) F A Figure 1 Power Derating Curve, Total Package Figure 2 Typical Forward Characteristics 2 of 4 BAS21DWA January 2018 Diodes Incorporated www.diodes.com Document number: DS36559 Rev. 9 - 2 ADVANCED INFORMATION P , POWER DISSIPATION (mW) D I , INSTANTANEOUS FORWARD CURRENT (mA) F