BAS521LPQ HIGH VOLTAGE SWITCHING DIODE Features Mechanical Data Fast Switching Speed: Maximum of 50ns Case: X1-DFN1006-2 High Reverse Breakdown Voltage: 325V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Leakage Current: Maximum of 50nA when V = 5V or R Maximum of 150nA when V = 250V at Room Temperature Moisture Sensitivity: Level 1 per J-STD-020 R Ultra Small Plastic SMD Package: 1.0mm x 0.6mm x 0.5mm Terminals: Finish - NiPdAu over Copper Leadframe. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 e4 Halogen and Antimony Free.Gree Device (Note 3) Weight: 0.0009 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) X1-DFN1006-2 2 1 Bottom View Device Schematic Ordering Information (Note 5) Part Number Qualification Case Packaging BAS521LPQ-7B Automotive X1-DFN1006-2 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAS521LPQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage V 325 V RRM Working Peak Reverse Voltage V RWM 325 V DC Blocking Voltage VR Forward Current (Note 6) 400 mA I F Non-Repetitive Peak Forward Surge Current t = 1.0s 8.0 A I FSM Repetitive Peak Forward Current t=8.3ms 3.0 A I FRM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 400 mW PD Thermal Resistance Junction to Ambient Air (Note 6) 312 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 7) V 300 V I = 100A (BR)R R Forward Voltage V 1.1 V I = 100mA F F V = 5V 50 nA R Reverse Current (Note 7) 150 nA I V = 250V R R 100 A V = 250V, T = +150C R J Total Capacitance C 5 pF V = 0, f = 1.0MHz T R I = I = 30mA, F R Reverse Recovery Time t 50 ns rr I = 0.1 x I , R = 100 rr R L Notes: 6. Part is mounted on a FR-7 substrate PC board, with 1 x 1 2oz copper pad. 7. Short duration pulse test used to minimize self-heating effect. 400 1,000 Note 6 350 100 300 250 10 200 150 1 100 50 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 V , INSTANTANEOUS FORWARD VOLTAGE (V) F T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Forward Characteristics Fig. 1 Power Derating Curve 2 of 4 BAS521LPQ September 2017 Diodes Incorporated www.diodes.com Document number: DS40217 Rev. 1 - 2 P , POWER DISSIPATION (mW) D I , INSTANTANEOUS FORWARD CURRENT (mA) F