BAV70HDW
SURFACE MOUNT SWITCHING DIODE ARRAY
Features Mechanical Data
Fast Switching Speed Case: SOT363
Low Capacitance Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Low Leakage Current
Moisture Sensitivity: Level 1 per J-STD-020
Two BAV70 Circuits in One Package
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208
Halogen and Antimony Free.Gree Device (Note 3)
Orientation: See Diagram
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.006 grams (Approximate)
An Automotive-Compliant Part is Available Under
Separate Datasheet (BAV70HDWQ)
SOT363
A
C A
1 2 2
C
A A
1 1 2
Top View
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BAV70HDW-7 AEC-Q101 SOT363 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
BAV70HDW
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
V
Peak Repetitive Reverse Voltage RRM
Working Peak Reverse Voltage V 100 V
RWM
DC Blocking Voltage
V
R
RMS Reverse Voltage 71 V
V
R(RMS)
Forward Continuous Current (Note 5) 250 mA
I
FM
Average Rectified Output Current (Note 5) I 125 mA
O
Repetitive Peak Forward Current I 450 mA
FRM
Non-Repetitive Peak Forward Surge Current @ t = 1.0s 4
@ t = 1.0ms 1 A
I
FSM
@ t = 1.0s 0.5
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P 350 mW
D
Thermal Resistance, Junction to Ambient Air (Note 5) R 357 C/W
JA
Thermal Resistance, Junction to Solder Point 255 C/W
R
JSP
Operating and Storage Temperature Range -65 to +150 C
T , T
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 6) V 100 V I = 20A
(BR)R R
I = 1.0mA
0.715 F
0.855 I = 10mA
F
Forward Voltage V
V
F
1.0
I = 50mA
F
1.25
I = 150mA
F
V = 80V
0.5 A R
V = 80V, T = +150C
100 A R J
Reverse Current (Note 6)
I
R
30 A
V = 25V, T = +150C
R J
30 nA
V = 25V
R
Total Capacitance C 1.5 pF V = 0, f = 1.0MHz
T R
I = I = 10mA,
F R
Reverse Recovery Time t 4.0 ns
RR
I = 0.1 x I , R = 100
RR R L
Forward Recovery Voltage V 1.75 V I = 10mA, t = 20ns
FR F R
Notes: 5. Part is mounted on a FR-4 substrate PC board, with 1" x 1" 2oz Cu pad.
6. Short duration pulse test used to minimize self-heating effect.
2 of 5
BAV70HDW September 2017
Diodes Incorporated
www.diodes.com
Document number: DS37595 Rev. 8 - 2
ADVANCED INFORMATION