BAV70W-7-F Diodes Incorporated

BAV70W Green DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data Fast Switching Speed: Maximum of 4ns Case: SOT323 Low Capacitance: Maximum of 2.0pF Case Material: Molded Plastic,Gree Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 For General Purpose Switching Applications Terminals: Solderable per MIL-STD-202, Method 208 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Halogen and Antimony Free. Green Device (Note 3) Leadframe) Qualified to AEC-Q101 Standards for High Reliability Polarity: See Diagram Weight: 0.006 grams (Approximate) SOT323 Top View Top View Internal Schematic Ordering Information (Notes 4 & 5) Part Number Qualification Case Packaging BAV70W-7-F Commercial SOT323 3,000/Tape & Reel BAV70WQ-7-F Automotive SOT323 3,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See BAV70W Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 75 V VRWM DC Blocking Voltage V R RMS Reverse Voltage 53 V V R(RMS) Forward Continuous Current (Note 6) I 300 mA FM t = 1.0s 2.0 Non-Repetitive Peak Forward Surge Current (Note 6) I A FSM t = 1.0s 1.0 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 200 mW D Thermal Resistance Junction to Ambient Air (Note 6) 625 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 7) 75 V V(BR)R IR = 100A I = 1.0mA 0.715 F 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F V = 75V 2.5 A R 50 V = 75V, T = +150C A R J Reverse Current (Note 7) I R 30 A V = 25V, T = +150C R J 25 nA V = 20V R Total Capacitance 2.0 pF C V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Notes: 6. Device mounted on a 2 x 2 AI board. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 BAV70W May 2017 Diodes Incorporated www.diodes.com Document number: DS30063 Rev. 11 - 2