BAW56DWQ-7-F Diodes Incorporated

BAW56DW SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT363 Ultra-Small Surface Mount Package Case Material: Molded Plastic. UL Flammability Classification For General Purpose Switching Applications Rating 94V-0 High Conductance Moisture Sensitivity: Level 1 per J-STD-020D e3 Two BAW56 Circuits In One Package Terminals: Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Halogen and Antimony Free. Green Device (Note 3) leadframe). Qualified to AEC-Q101 Standard for High Reliability Polarity: See Diagram Weight: 0.006 grams (approximate) SOT363 C A C 1 2 2 A C C 1 1 2 Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging BAW56DW-7-F SOT363 3000/Tape & Reel BAW56DWQ-7-F SOT363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAW56DW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 75 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current (Note 5) I 300 mA FM Average Rectified Output Current (Note 5) I 150 mA O Non-Repetitive Peak Forward Surge Current t = 1.0s 2.0 I A FSM t = 1.0s 1.0 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance Junction to Ambient Air (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 75 V I = 2.5A (BR)R R 0.715 I = 1.0mA F I = 10mA 0.855 F Forward Voltage V V F I = 50mA 1.0 F I = 150mA 1.25 F 2.5 A V = 75V R 50 A V = 75V, T = +150C R J Reverse Current (Note 6) I R 30 A V = 25V, T = +150C R J 25 nA V = 20V R Total Capacitance C 2.0 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at