BC847BVN
COMPLEMENTARY PAIR SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Die Construction Case: SOT563
Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound.
Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020
Halogen and Antimony Free.Gree Device (Note 3) Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Qualified to AEC-Q101 Standards for High Reliability Solderable per MIL-STD-202, Method 208
PPAP Capable (Note 4) Weight: 0.003 grams (Approximate)
SOT563
C B E
2
1 2
Q
Q
1 2
E B C
1 1 2
Device Schematic
Top View Bottom View
Top View
Ordering Information (Notes 4 & 5)
Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BC847BVN-7 AEC-Q101 KAW 7 8 3,000
BC847BVNQ-7 Automotive KAW 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
BC847BVN
Maximum Ratings: NPN, BC847B Type (Q ) (@T = +25C, unless otherwise specified.)
1 A
Characteristic Symbol Value Unit
Collector-Base Voltage V 50 V
CBO
Collector-Emitter Voltage V 45 V
CEO
Emitter-Base Voltage V 6 V
EBO
Collector Current 100 mA
IC
Peak Collector Current 200 mA
I
CM
Peak Emitter Current 200 mA
I
EM
Maximum Ratings: PNP, BC857B Type (Q ) (@T = +25C unless otherwise specified.)
2 A
Characteristic Symbol Value Unit
Collector-Base Voltage V -50 V
CBO
Collector-Emitter Voltage V -45 V
CEO
Emitter-Base Voltage V -6 V
EBO
Collector Current I -100 mA
C
Peak Collector Current I -200 mA
CM
Peak Emitter Current -200 mA
I
EM
Thermal Characteristics Total Device (@T = +25C unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 6) Total Device 150 mW
P
D
Thermal Resistance, Junction to Ambient (Note 6) 833 C/W
R
JA
Operating and Storage Temperature Range -65 to +150 C
T , T
J STG
Note: 6. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
Electrical Characteristics: NPN, BC847B Type (Q ) (@T = +25C unless otherwise specified.)
1 A
Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV 50 V I = 100A, I = 0
CBO C B
Collector-Emitter Breakdown Voltage BV 45 V I = 10mA, I = 0
CEO C B
Emitter-Base Breakdown Voltage BV 6 V I = 100A, I = 0
EBO E C
DC Current Gain 200 290 450
h V = 5.0V, I = 2.0mA
FE CE C
90 250 I = 10mA, I = 0.5mA
C B
Collector-Emitter Saturation Voltage mV
V
CE(sat)
200 600
I = 100mA, I = 5.0mA
C B
700 I = 10mA, I = 0.5mA
C B
Base-Emitter Saturation Voltage V mV
BE(sat)
900
I = 100mA, I = 5.0mA
C B
580 660 700 V = 5.0V, I = 2.0mA
CE C
Base-Emitter Voltage mV
V
BE(on)
720
V = 5.0V, I = 10mA
CE C
15 nA V = 30V
CB
Collector-Cutoff Current I
CBO
5.0 A
V = 30V, T = +150C
CB A
V = 5.0V, I = 10mA,
CE C
Gain Bandwidth Product 100 300 MHz
f
T
f = 100MHz
Collector-Base Capacitance 3.5 6.0 pF
C V = 10V, f = 1.0MHz
CBO CB
Note: 7. Short duration pulse test used to minimize self-heating effect.
2 of 6
March 2015
BC847BVN
Diodes Incorporated
www.diodes.com
Document number: DS30627 Rev. 7 - 2