RN2705,LF Toshiba

RN2701 to RN2706 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701, RN2702, RN2703 RN2704, RN2705, RN2706 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1701 to RN1706 Equivalent Circuit and Bias Resistor Values Part No. R1 (k ) R2 (k ) USV RN2701 4.7 4.7 JEDEC JEITA RN2702 10 10 TOSHIBA 2-2L1A RN2703 22 22 Weight: 6.2 mg (typ.) RN2704 47 47 RN2705 2.2 47 RN2706 4.7 47 Equivalent Circuit (top view) Start of commercial production 1992-01 1 2019 2019-10-24 Toshiba Electronic Devices & Storage Corporation RN2701 to RN2706 Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO RN2701 to 2706 Collector-emitter voltage V 50 V CEO RN2701 to 2704 10 Emitter-base voltage V V EBO RN2705, 2706 5 Collector current I 100 mA C Collector power dissipation P * 200 mW C RN2701 to 2706 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating 2 2019 2019-10-24 Toshiba Electronic Devices & Storage Corporation