D1213A-01LP
1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Features Mechanical Data
IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV Case: X1-DFN1006-2
1 Channel of ESD Protection Case Material: Molded Plastic,Gree Molding Compound. UL
Flammability Classification Rating 94V-0
Low Channel Input Capacitance of 0.85pF Typical
Moisture Sensitivity: Level 1 per J-STD-020
Low Profile Package (0.53mm max) and Ultra-small PCB
Footprint Area (1.08 * 0.68mm max) Suitable for Compact Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
Portable Electronics STD-202, Method 208 e4
Typically Used at High Speed Ports such as USB 2.0, Weight: 0.001 grams (Approximate)
IEEE1394, Serial ATA, DVI, HDMI, PCI
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Pin 1
X1-DFN1006-2
Pin 2
Bottom View
Device Schematic
Ordering Information (Note 4)
Part Number Case Packaging
D1213A-01LP-7B X1-DFN1006-2 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D1213A-01LP
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
8/20 s, Per Figure 3
Peak Pulse Current I 5 A
PP
Standard IEC 61000-4-2
ESD Protection Contact Discharge V 8 kV
ESD_Contact
Standard IEC 61000-4-2
ESD Protection Air Discharge V 15 kV
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) 250 mW
P
D
Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMin Typ Max Unit Test Conditions
Reverse working voltage VRWM 3.3 V
Reverse current (Note 6) I 0.1 1.0 A V = V = 3.3V
R R RWM
Reverse breakdown voltage VBR 6.0 V I = 1mA
R
Forward voltage 0.6 0.8 0.95 V
V I = 8mA
F F
Reverse clamping voltage, Positive Transients 10.0 V
V I = 1A, t = 8/20 s
CL1 PP p
Reverse clamping voltage, Negative Transients -1.7 V
V I = -1A, t = 8/20s
CL2 PP p
Dynamic resistance R 0.9 I = 1A, t = 8/20s
DYN R p
Capacitance C 0.85 1.2 pF V = 1.65V, f = 1MHz
T R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at