D1213A-01W 1 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV Case: SOT323 1 Channel of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Channel Input Capacitance of 0.85pF Typical Moisture Sensitivity: Level 1 per J-STD-020 Typically Used at High Speed Ports such as USB 2.0, IEEE1394, Serial ATA, DVI, HDMI, PCI Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V N SOT323 V P 3 CH 1 12 V N CH1 V P Top View Pin Configuration Device Schematic Ordering Information (Note 4) Part Number Case Packaging D1213A-01W-7 SOT323 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D1213A-01W Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Operating Supply Voltage V - V 6.0 V - P N DC Voltage at any Channel Input - (V 0.5) to (V + 0.5) V - N P Peak Pulse Current I 5 A 8/20s, Per Figure 3 PP ESD Protection Contact Discharge V 8 kV Standard IEC 61000-4-2 ESD Contact ESD Protection Air Discharge 15 kV Standard IEC 61000-4-2 V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range -65 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Operating Supply Voltage V - 3.3 5.5 V - P Operating Supply Current (Note 6) I - - 8.0 A (V V ) = 3.3V P P N Channel Leakage Current (Note 6) I - 0.1 1.0 A V = 5V, V = 0V R P N Reverse breakdown voltage V 6.0 - - V I = 1mA BR R Clamping Voltage, Positive Transients V - 10.0 - V I = 1A, t = 8/20 s CL1 PP p Clamping Voltage, Negative Transients V - -1.7 - V I = -1A, t = 8/20s CL2 PP p Forward Voltage for Top Diode 0.60 0.80 0.95 V I = 8mA, CH1 to V V FD1 F P Forward Voltage for Bottom Diode 0.60 0.80 0.95 V V I = 8mA, V to CH1 FD2 F N Dynamic Resistance - 0.9 - R I = 1A, t = 8/20 s DYN PP p V = 1.65V, V = 3.3V, IN P Channel Input Capacitance C - 0.85 1.2 pF T V = 0V, f = 1MHz N Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at