D1213A-04V 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV Case: SOT563 4 Channels of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Channel Input Capacitance of 0.85pF Typical Moisture Sensitivity: Level 1 per J-STD-020 Typically Used at High Speed Ports such as USB 2.0, IEEE1394, Serial ATA, DVI, HDMI, PCI Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.003 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V CH 4 CH 3 P 65 4 SOT563 12 3 CH 1 V CH 2 N Device Schematic Bottom View Top View Ordering Information (Note 4) Part Number Case Packaging D1213A-04V-7 SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D1213A-04V Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions - Operating Supply Voltage V - V 6.0 V P N - DC Voltage at any Channel Input - (V 0.5) to (V + 0.5) V N P Peak Pulse Current I 5.0 A 8/20s, Per Fig. 3 PP Standard IEC 61000-4-2 ESD Protection Contact Discharge V 8 kV ESD Contact Standard IEC 61000-4-2 ESD Protection Air Discharge 15 kV V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 380 mW D Thermal Resistance, Junction to Ambient (Note 5) 327 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Operating Supply Voltage - 3.3 5.5 V V P Operating Supply Current (Note 6) - - 8.0 I A (V V ) = 3.3V P P N Channel Leakage Current (Note 6) - 0.1 1.0 I A V = 5V, V = 0V R P N Reverse breakdown voltage 6.0 - - V V I = 1mA BR R Clamping Voltage, Positive Transients - 10.0 - V V I = 1A (Note 7) CL1 PP Clamping Voltage, Negative Transients V - -1.7 - V I = -1A (Note 7) CL2 PP Forward Voltage for Top Diode V 0.60 0.80 0.95 V I = 8mA, any channel to V FD1 F P Forward Voltage for Bottom Diode V 0.60 0.80 0.95 V I = 8mA, V to and channel FD2 F N Dynamic Resistance R - 0.9 - I = 1A (Note 7) DYN PP V = 1.65V, V = 3.3V, IN P Channel Input Capacitance - 0.85 1.2 pF C T V = 0V, f = 1MHz N Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at