D15V0H1U2LP16 1 CHANNEL HIGH SURGE TVS DIODE Product Summary Features Provides ESD Protection per IEC 61000-4-2 Standard: V I I BR (min) PP (max) R (max) Air 30kV, Contact 30kV 15.5V 90A 200nA One Channel of ESD Protection Low Channel Input Capacitance Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high Mechanical Data ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Case: U-DFN1616-2 Case Material: Molded Plastic, Green Molding Compound. UL Applications Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Cellular Handsets Terminals: NiPdAu over Copper Leadframe. Solderable per MIL- Portable Electronics e4 STD-202, Method 208 Computers and Peripheral Weight: 0.004 grams (Approximate) Pin 2 Pin 1 Device Schematic Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D15V0H1U2LP16-7 Standard QE6 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D15V0H1U2LP16 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation 2,250 W 8/20s (Note 7) P PP Peak Pulse Current 90 A 8/20s (Note 7) I PP ESD Protection Contact Discharge 30 kV Standard IEC 61000-4-2 V ESD Contact ESD Protection Air Discharge 30 kV Standard IEC 61000-4-2 V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 300 mW P D 417 Thermal Resistance, Junction to Ambient T = +25C R C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 15 V RWM Channel Leakage Current (Note 6) 200 nA I V = 15V R R Forward Voltage 0.6 0.8 1.2 V V I = 10mA F R Reverse Breakdown Voltage 15.5 V V I = 1mA BR R 18 V I = 1A, t = 8/20s PP P Clamping Voltage, Positive Transients (Note 7) 20 V V I = 10A, t = 8/20s C PP P 25 V I = 90A, t = 8/20s PP P Channel Input Capacitance (Note 8) C 700 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown in Diodes Incorporateds package outline PDFs, which can be found on our website at