D3V3F4U6S 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV Case: SOT363 4 Channels of ESD Protection Case Material: Molded Plastic, Green Molding Compound. UL Maximum Working Voltage: VRWM = 3.3V Flammability Classification Rating 94V-0 Low Channel Input Capacitance of 0.85pF Typical Moisture Sensitivity: Level 1 per J-STD-020 Typically Used at High Speed Ports such as USB 2.0, Terminals: Matte Tin Finish annealed over Alloy 42 leadframe IEEE1394, Serial ATA, DVI, HDMI, PCI (Lead Free Plating) solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) CH 4 V CH 3 P SOT363 65 4 12 3 V CH 1 CH 2 N Top View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel size(inches) Tape width(mm) Quantity per reel D3V3F4U6S-7 AEC-Q101 TE7 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See D3V3F4U6S Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 5 A 8/20s, Per Figure 3 PP ESD Protection Contact Discharge 8 kV Standard IEC 61000-4-2 V ESD Contact ESD Protection Air Discharge 15 kV Standard IEC 61000-4-2 V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 200 mW P D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage VRWM 3.3 V Reverse Current (Note 6, 7) I 200 nA V = 3.3V R R Reverse Breakdown Voltage VBR 6.0 V I = 1mA R Forward Voltage V 0.6 0.8 0.95 V I = 8mA F F Reverse Clamping Voltage, Positive Transients V 10.0 V I = 1A, t = 8/20s CL1 PP p Reverse Clamping Voltage, Negative Transients V -1.7 V I = -1A, t = 8/20s CL2 PP p Dynamic Resistance R 0.9 I = 1A, t = 8/20s DYN R p Capacitance 0.85 1.2 pF C V = 1.65V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at