D3V3H1U2LP 1 CHANNEL UNIDIRECTIONAL TVS Product Summary Features V I C Low Profile Package (0.53mm max) and Ultra-Small PCB BR(MIN) PP(MAX) T(TYP) 4.0V 35A 280pF Footprint Area (1.08 * 0.68mm max) Suitable for Compact Portable Electronics Provides ESD Protection per IEC 61000-4-2 Standard: Description Air 30kV, Contact 30kV This new generation TVS is designed to protect sensitive electronics 1 Channel of ESD Protection from the damage due to ESD. The combination of small size and high Low Channel Input Capacitance ESD surge capability makes it ideal for use in portable applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) such as cellular phones, digital cameras, and MP3 players. Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change Applications control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Cellular Handsets please contact us or your local Diodes representative. Portable Electronics D3V3H1U2LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Condition Peak Pulse Power Dissipation P 350 W 8/20s, Per Figure 3 PP Peak Pulse Current I 35 A 8/20s, Per Figure 3 PP ESD Protection Contact Discharge V 30 kV IEC61000-4-2 Standard ESD CONTACT ESD Protection Air Discharge V 30 kV IEC61000-4-2 Standard ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) PD 250 mW Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Working Voltage VRWM 3.3 V Reverse Current (Note 6) IR 5 A V = V = 3.3V R RWM Reverse Breakdown Voltage VBR 4.0 V I = 1mA R 7.5 I = 5A, t = 8/20s PP P Reverse Clamping Voltage V VCL 10 I = 35A, t = 8/20s PP P 6.0 I = 4A, t = 10/100ns PP P ESD Clamping Voltage (Note 7) V V C 7.0 IPP = 16A, tP = 10/100ns Capacitance 280 pF CT VR = 0V, f = 1MHz Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at