D3V3M1U2LP3 3.3V UNIDIRECTIONAL TVS DIODE Product Summary Features V I C BR MIN PP MAX T TYP Provides ESD Protection per IEC 61000-4-2 Standard: 4.5V 12A 70pF Air 30kV, Contact 30kV 1 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high- ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Mechanical Data Applications Case: X3-DFN0603-2 Cellular Handsets Case Material: Molded Plastic, Green Molding Compound. Portable Electronics UL Flammability Classification Rating 94V-0 Computers and Peripheral Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) X3-DFN0603-2 Pin 2 Pin 1 Top View Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D3V3M1U2LP3-7 Standard MY 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D3V3M1U2LP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 120 W 8/20s, Figure 3 PP Peak Pulse Current I 12 A 8/20s, Figure 3 PP ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard ESD CONTACT ESD Protection Air Discharge V 30 kV IEC 61000-4-2 Standard ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 3.3 V V RWM Channel Leakage Current (Note 6) 2.0 A I V = 3.3V RM RWM 8 I = 1A, tp = 8/20s PP Clamping Voltage, IEC 61000-4-5 V V CL 10 I = 12A, tp = 8/20s PP Breakdown Voltage V 4.5 V I = 1mA BR R Channel Input Capacitance C 70 85 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at