D3V3P4U10LP26
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary Features
V I C
BR(MIN) PP(MAX) T(TYP)
Provides ESD Protection per IEC 61000-4-2 Standard:
3.8V 25A 3.8pF
Air 30kV, Contact 30kV
4 Channels of ESD Protection
Description
Low Channel Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This new generation TVS is designed to protect sensitive electronics
Halogen and Antimony Free. Green Device (Note 3)
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
Mechanical Data
such as cellular phones, digital cameras, and MP3 players.
Case: U-DFN2626-10
Applications
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Cellular Handsets
Moisture Sensitivity: Level 1 per J-STD-020
Portable Electronics
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
Computers and Peripheral
e4
STD-202, Method 208
Weight: 0.01 grams (Approximate)
U-DFN2626-10
NC
9 7
Pin # Description
1, 3, 7, 9 I/Os
2, 4, 6, 8, 10 No Connect
No Connect
5 (Do not connect to
a DC supply)
Center
Center Tab Ground
NC
Pin Description
Top View Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D3V3P4U10LP26-7 Standard QD 7 8 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D3V3P4U10LP26
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current 25 A 8/20s (Note 7)
I
PP
ESD Protection Contact Discharge 30 kV Standard IEC 61000-4-2
V
ESD_Contact
ESD Protection Air Discharge 30 kV Standard IEC 61000-4-2
V
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 500 mW
P
D
250
Thermal Resistance, Junction to Ambient T = +25C R C/W
A JA
Operating and Storage Temperature Range -55 to +150
T , T C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 3.3 V
RWM
Channel Leakage Current (Note 6) I 1000 nA V = 3.3V, Any I/O to GND
R R
Reverse breakdown voltage 3.8 6.5 V IR = 1mA, from pin 5 to pin 2
V
BR
6.7 V
I = 1A, t = 8/20s
PP P
Clamping Voltage, Positive Transients (Note 7) V 8.5 V I = 10A, t = 8/20s
C PP P
12 V
I = 25A, t = 8/20s
PP P
V = 0V, f = 1MHz, Any I/O to
R
Channel Input Capacitance (Note 8) C 3.8 5 pF
T
GND
Dynamic Resistance 0.3
R I = 1A, t = 8/20s
DYN PP P
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at