D5V0F2U3LP08
2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary Features
Low Profile Package (0.04mm max) and Ultra-small PCB
V I C
BR (min) PP (max) T (typ)
Footprint Area (0.85 x 0.65mm max) Suitable for Compact
6V 1.5A 0.5pF
Portable Electronics
Provides ESD Protection per IEC 61000-4-2 Standard:
Description
Air 15kV, Contact 15kV
This new generation TVS is designed to protect sensitive electronics 2 Channels of ESD Protection
from the damage due to ESD. The combination of small size and high Low Channel Input Capacitance
ESD surge capability makes it ideal for use in portable applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
such as cellular phones, digital cameras, and MP3 players. Halogen and Antimony Free. Green Device (Note 3)
Applications Mechanical Data
Cellular Handsets Case: X2-DFN0806-3
Portable Electronics Case Material: Molded Plastic, Green Molding Compound. UL
Computers and Peripheral Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208 e4
Weight: 0.001 grams (approximate)
X2-DFN0806-3
Bottom View
Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0F2U3LP08-7B Standard U9 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D5V0F2U3LP08
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
8/20s (Note 7)
Peak Pulse Current I 1.5 A
PP
Standard IEC 61000-4-2
ESD Protection Contact Discharge V 15 kV
ESD_Contact
Standard IEC 61000-4-2
ESD Protection Air Discharge V 15 kV
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P 250 mW
D
500 C/W
Thermal Resistance, Junction to Ambient T = +25C R
A JA
Operating and Storage Temperature Range -55 to +150
T , T C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 5.5 V
RWM
Channel Leakage Current (Note 6) I 100 nA V = 5V, Any I/O to GND
R R
Reverse breakdown voltage V 6.0 V I = 1mA
BR R
Clamping Voltage, Positive Transients (Note 7) V 10 12 V I = 1A, t = 8/20s
C PP p
V = 0V, f = 1MHz, Any I/O to
R
0.5
GND
Channel Input Capacitance (Note 8) C pF
T
V = 2.5V, f = 1MHz, Any I/O to
R
0.4 0.65
GND
Dynamic Resistance 0.9
R I = 1A, t = 8/20s
DYN PP p
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at