D5V0F2U3LP 2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features Low Profile Package (0.53mm max) and Ultra-small PCB V I C BR (min) PP (max) T (typ) Footprint Area (1.08 x 0.68mm max) Suitable for Compact 6V 1.5A 0.5pF Portable Electronics Provides ESD Protection per IEC 61000-4-2 Standard: Description Air 15kV, Contact 15kV This new generation TVS is designed to protect sensitive electronics 2 Channels of ESD Protection from the damage due to ESD. The combination of small size and high Low Channel Input Capacitance ESD surge capability makes it ideal for use in portable applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) such as cellular phones, digital cameras, and MP3 players. Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Cellular Handsets Case: X1-DFN1006-3 Portable Electronics Case Material: Molded Plastic, Green Molding Compound. UL Computers and Peripheral Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper leadframe. Solderable per MIL- e4 STD-202, Method 208 Weight: 0.001 grams (approximate) X1-DFN1006-3 Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0F2U3LP-7B Standard Q1 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0F2U3LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current 1.5 A 8/20s (Note 7) I PP Standard IEC 61000-4-2 ESD Protection Contact Discharge 15 kV V ESD Contact Standard IEC 61000-4-2 ESD Protection Air Discharge 15 kV V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 300 mW P D 417 Thermal Resistance, Junction to Ambient T = +25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5.5 V RWM Channel Leakage Current (Note 6) I 100 nA V = 5V, Any I/O to GND R R Reverse breakdown voltage V 6.0 V I = 1mA BR R Clamping Voltage, Positive Transients (Note 7) 10 12 V V I = 1A, t = 8/20s C PP p V = 0V, f = 1MHz, Any I/O to R 0.5 GND Channel Input Capacitance (Note 8) C pF T V = 2.5V, f = 1MHz, Any I/O to R 0.4 0.65 GND Dynamic Resistance R 0.9 I = 1A, t = 8/20s DYN PP p Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at