D5V0FS4U10LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V I C Clamping Voltage: 6V at 16A TLP BR (Min) PP (Max) I/O (Typ) 5.5V 3.5A 0.45pF IEC 61000-4-2 (ESD): Air 8kV, Contact 8kV IEC 61000-4-5 (Lightning): 3.5A (8/20s) 4 Channels of ESD Protection Description Ultra-Low Channel Input Capacitance of 0.45pF Typical The D5V0FS4U10LP is a high-performance device suitable for TLP Dynamic Resistance: 0.25 protecting four high speed I/Os. These devices are assembled in U- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) DFN2510-10 package and have high ESD surge capability, low ESD Halogen and Antimony Free. Green Device (Note 3) clamping voltage and ultra-low capacitance. Mechanical Data Applications Case: U-DFN2510-10 Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial Case Material: Molded Plastic, Green Molding Compound. ATA, Display port. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e4 Weight: 0.038 grams (Approximate) U-DFN2510-10 Pin5 Pin1 Pin2 Pin4 10 9 8 7 6 Pin Description 1, 2, 4, 5 I/O 6, 7, 9, 10 No Connection 3, 8 Vss 1 2 3 4 5 3,8 Pin Description (Top View) Device Schematic Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity D5V0FS4U10LP-7 Standard NZ1 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0FS4U10LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 3.5 A I I/O to V , 8/20s PP SS Peak Pulse Power, per IEC 61000-4-5 20 W P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 8 kV V I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 V 8 kV I/O to V ESD AIR SS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) 360 C/W R JA Operating and Storage Temperature Range -55 to +150 C T ,T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 5 V V RWM Reverse Current 1 A I V = 5V, I/O to V R R SS Reverse Breakdown Voltage 5.5 7.0 V V I = 1mA, I/O to V BR R SS Forward Clamping Voltage -1.0 -0.85 V V I = -15mA, I/O to V F F SS Holding Reverse Voltage 1.19 V V I/O to V HOLD SS Holding Reverse Current 90 mA I I/O to V HOLD SS Reverse Clamping Voltage (Note 6) 3 V V I = 3A, I/O to V , 8/20s C PP SS Clamping Voltage (Note 7) V 6 V TLP, 16A, tp = 100ns, I/O to V C SS Clamping Voltage (Note 7) 4.5 V VC TLP, -16A, tp = 100ns, I/O to VSS Dynamic Reverse Resistance 0.25 R TLP, 10A, tp = 100ns, I/O to V DIF-R SS Dynamic Forward Resistance 0.2 R TLP, 10A, tp = 100ns, V to I/O DIF-F SS Channel Input Capacitance 0.45 pF C V = 0V, V = 0V, f = 1MHz I/O I/O SS 55 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at