D5V0L1B2S9 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V I C BR min pp max in typ Provides ESD Protection per IEC 61000-4-2 Standard: 6V 6A 15pF Air 30kV, Contact 30kV 1 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability make it ideal for use in portable applications Mechanical Data such as cellular phones, digital cameras and MP3 players. Case: SOD923 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Cellular Handsets Moisture Sensitivity: Level 1 per J-STD-020 Portable Electronics Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Computers and Peripheral (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 e3 Weight: 0.001 grams (Approximate) SOD923 Pin 1 Pin 2 Top View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0L1B2S9-7 Standard S/S 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0L1B2S9 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 84 W 8/20s, per Figure 1 PP Peak Pulse Current I 6 A 8/20s, per Figure 1 PP ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard VESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5 V RWM Channel Leakage Current (Note 6) I 10 100 nA V = 5V RM RWM 7.0 9.0 I = 1A, t = 8/20S PP p 8.7 10.7 I = 3A, t = 8/20S PP p Clamping Voltage, Positive Transients V V CL 10.5 12.0 I = 5A, t = 8/20S PP p 11.5 14.0 I = 6A, t = 8/20S PP p Breakdown Voltage 6 7 8 V V I = 1mA BR R Differential Resistance 0.2 R I = 1A, t = 8/20S DIF R p Channel Input Capacitance 15 20 pF C V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at