D5V0M1U2LP3
SINGLE CHANNEL UNIDIRECTIONAL TVS DIODE
Product Summary Features
V I C
BR(MIN) PP(MAX) IN(TYP) Provides ESD Protection per IEC 61000-4-2 Standard:
6.2V 10A 55pF
Air 30kV, Contact 30kV
1 Channel of ESD Protection
Description Low Channel Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This new generation TVS is designed to protect sensitive electronics
Halogen and Antimony Free. Green Device (Note 3)
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
Mechanical Data
such as cellular phones, digital cameras, and MP3 players.
Case: X3-DFN0603-2
Applications
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Cellular Handsets
Moisture Sensitivity: Level 1 per J-STD-020
Portable Electronics
Terminals: Matte Tin over Copper Leadframe, per MIL-STD-202,
Computers and Peripheral
Method 208
Weight: 0.0002 grams (Approximate)
X3-DFN0603-2
Pin 2 Pin 1
Bottom View Device Schematic
Top View
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0M1U2LP3-7 Standard DE 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D5V0M1U2LP3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P 120 W 8/20s, per Figure 1
PP
Peak Pulse Current I 10 A 8/20s, per Figure 1
PP
ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard
ESD_Contact
ESD Protection Air Discharge V 30 kV IEC 61000-4-2 Standard
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P 250 mW
D
Thermal Resistance, Junction to Ambient (Note 5) 500 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 5.5 V
RWM
Channel Leakage Current (Note 6) I 500 nA V = 5V
RM RWM
Breakdown Voltage V 6.2 V I = 1mA
BR R
8 V I = 1A, t = 8/20S
PP P
Clamping Voltage, Positive Transients
V
CL
11 V I = 10A, t = 8/20S
PP P
ESD Clamping Voltage, Positive Transient,
8.75 V
V I = 10A, t = 100ns
ESD_CLP TLP P
TLP
ESD Clamping Voltage, Negative Transient,
-2.0 V
V I = -10A, t = 100ns
ESD_CLN TLP P
TLP
I = 10A to 20A, t = 100ns,
TLP P
Differential Resistance R 0.15
DYN
I/O to GND
Channel Input Capacitance C 55 pF V = 0V, f = 1MHz
IN R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc., which can be found on our website at