D5V0M2B3LP10 2 CHANNEL HIGH SURGE BIDIRECTIONAL TVS DIODE Product Summary Features V I C BR min pp max in typ Provides ESD Protection per IEC 61000-4-2 Standard: 5.5V 12A 28pF Air 30kV, Contact 30kV 2 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Applications Mechanical Data Cellular Handsets Case: X2-DFN1010-3 Portable Electronics Case Material: Molded Plastic, Green Molding Compound. Computers and Peripheral UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe. e4 Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) X2-DFN1010-3 Ch2 2 2 3 3 GND 1 Ch1 1 Device Schematic Top View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0M2B3LP10-7 Standard SJ 7 8 5,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0M2B3LP10 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 130 W 8/20s, per Figure 1 PP Peak Pulse Current 12 A 8/20s, per Figure 1 IPP ESD Protection Contact Discharge 30 kV IEC 61000-4-2 Standard V ESD Contact ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5 V RWM Channel Leakage Current (Note 6) I 5 100 nA V = 5V RM RWM 10 I = 1A, t = 8/20S PP p Clamping Voltage, Positive Transients V V CL 14 I = 12A, t = 8/20S PP p Breakdown Voltage 5.5 9.5 V V I = 1mA BR R Differential Resistance 0.3 R I = 10A, t = 8/20S DIF R p Channel Input Capacitance C 28 32 pF V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at