D5V0P1B2LP3
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Product Summary Features
V I C Ultra-Small, Low Profile Leadless Surface Mount Package (0.6 *
BR (min) PP (max) T (typ)
6.0V 4A 8pF
0.3 * 0.3mm)
Provides ESD Protection per IEC 61000-4-2 Standard:
Description Air 17kV, Contact 15kV
1 Channel of ESD Protection
This new generation TVS is designed to protect sensitive electronics
Low Channel Input Capacitance
from the damage due to ESD. The combination of small size and high
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
ESD surge capability makes it ideal for use in portable applications
Halogen and Antimony Free. Green Device (Note 3)
such as cellular phones, digital cameras and MP3 players.
Applications Mechanical Data
Case: X3-DFN0603-2
Cellular Handsets
Case Material: Molded Plastic, Green Molding Compound.
Portable Electronics
UL Flammability Classification Rating 94V-0
Computers and Peripheral
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin over Copper leadframe, solderable
e3
per MIL-STD-202, Method 208
Weight: 0.0002 grams (approximate)
Device Schematic
Top View Bottom View
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0P1B2LP3-7 Standard 6/9 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D5V0P1B2LP3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current I 4 A 8/20s, per Figure 3
PP
ESD Protection Contact Discharge V 15 kV IEC 61000-4-2 Standard
ESD_Contact
ESD Protection Air Discharge 17 kV IEC 61000-4-2 Standard
V
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P 250 mW
D
Thermal Resistance, Junction to Ambient (Note 5) 500 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage 5.5 V
V
RWM
Channel Leakage Current (Note 6) 10 100 nA
I V = 5V
RM RWM
7.0 9.0 I = 1A, tp = 8/20S, Figure 3
PP
Clamping Voltage, Positive Transients V V
CL
11.0 13.0 I = 4A, tp = 8/20S, Figure 3
PP
Breakdown Voltage V 6 7 8 V I = 1mA
BR R
Channel Input Capacitance C 8 10 pF V = 0V, f = 1MHz
T R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at