D5V0P4B5LP08 4 CHANNEL BI-DIRECTIONAL TVS ARRAY Features Mechanical Data Provides ESD Protection per IEC 61000-4-2 Standard: Case: X2-DFN0808-4 Air 15kV, Contact 15kV Case Material: Molded Plastic, Green Molding Compound. UL 4 Channel of ESD Protection Flammability Classification Rating 94V-0 Low Channel Input Capacitance of 4.8pF Typical Moisture Sensitivity: Level 1 per J-STD-020 IEC 61000-4-5 (Surge): 3A (t = 8x20s) Terminal Connections: See Diagram P Ultra Low Leakage Current 100nA (Max) Terminals: Finish NiPdAu Annealed over Copper Leadframe. e4 Typically Used in Cellular Handsets, Portable Electronics, Solderable per MIL-STD-202, Method 208 Communication Systems, Computers and Peripherals Weight: 0.0015 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 2 1 GND 4 3 Top View Pin Configuration Ordering Information (Note 4) Product Compliance Marking Reel Size(inch) Tape Width(mm) Quantity per Reel D5V0P4B5LP08-7 Standard SB 7 8 5,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0P4B5LP08 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 40 W 8/20s PP Peak Pulse Current I 3 A 8/20s PP ESD Protection Contact Discharge V 15 kV IEC 61000-4-2 Standard ESD CONTACT ESD Protection Air Discharge V 15 kV IEC 61000-4-2 Standard ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 300 mW P D Thermal Resistance, Junction to Ambient (Note 5) 417 R C/W JA Operating and Storage Temperature Range -65 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 5.5 V V RWM Leakage Current (Note 6) I 100 nA V = 5V RM RWM 10 I = 1A, t = 8/20s PP P Clamping Voltage from Data Pin to GND V V CL1 13 IPP = 3A, tP = 8/20s 9 I = 1A, t = 8/20s PP P Clamping Voltage from GND to Data Pin V V CL2 13 I = 3A, t = 8/20s PP P 0.45 Pins to GND (Note 7) Dynamic Resistance RDYN 0.42 GND to Pins (Note 7) IO Capacitance C 4.8 7 pF V = 2.5V, f = 1MHz IO IO Breakdown Voltage from Data Pin to GND V 6 V I = 1mA BRF R Breakdown Voltage from GND to Data Pin V 6 V I = 1mA BRR R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at