D5V0P4URL6SO 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V (Min) I (Max) C (Typ) Clamping Voltage: 7.5V at 12A 100ns, TLP 6V at 5A 8s/20s BR PP T IEC 61000-4-2 (ESD): Air 30kV, Contact 30kV 4.5V 20A 2.4pF IEC 61000-4-4 (EFT): 80A (5/50ns) IEC 61000-4-5 (Lighting): 20A (8/20s) 4 Channels of ESD Protection Description Low Channel Input Capacitance of 2.4pF Typical The D5V0P4URL6SO is a high performance device suitable for TLP Dynamic Resistance: 0.15 protecting four high-speed I/Os. These devices are assembled in Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) SOT26 packages and have high ESD surge capability and low Halogen and Antimony Free. Green Device (Note 3) capacitance. Mechanical Data Applications Case: SOT26 Typically used at high-speed ports such as USB 2.0, IEEE1394 Moisture Sensitivity: Level 1 per J-STD-020 (FireWire , iLink), Serial ATA, DVI, HDMI and PCI. Terminal Connections: See Schematic Terminals Finish Matte Tin Pleated Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.016 grams (Approximate) SOT26 N/A Top View Device Schematic Circuit Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0P4URL6SO-7 Standard DE2 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0P4URL6SO Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 I 20 A I/O to V , 8/20s PP SS 180 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 30 kV V I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 30 kV V I/O to V ESD AIR SS Operating Temperature -55 to +85 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) 300 mW PD Thermal Resistance, Junction to Ambient Typical (Note 5) 417 C/W R JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V V I =1mA, I/O to V RWM R SS Reverse Current (Note 6) 1 A I V = 3.3V, I/O to V R R SS 8.0 Reverse Breakdown Voltage V 4.5 V I = 1mA, I/O to V BR R SS Forward Clamping Voltage 0.8 1.2 V V I = 15mA, V to I/O F F SS Reverse Clamping Voltage (Note7) 6 V V I = 5A, I/O to V , 8/20s C PP SS ESD Clamping Voltage 7.5 V V TLP, 12A, t = 100ns, I/O to V ESD P SS Dynamic Reverse Resistance 0.15 R TLP, 12A, t = 100ns, I/O to V DIF-R P SS Channel Input Capacitance 2.4 3 pF C V = 1.65V, V = 0V, f = 1MHz I/O I/O SS 55 0.04 pF Delta C C C C C I/O I/OMAX I/OMIN I/OMAX I/OMIN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. website at