D5V0Q1B2LP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V I C Ultra-Small, Low Profile Leadless Surface Mount Package (0.6 * BR (min) PP (max) T (typ) 6.0V 3A 6pF 0.3 * 0.3mm) Provides ESD Protection per IEC 61000-4-2 Standard: Description Air 17kV, Contact 15kV 1 Channel of ESD Protection This new generation TVS is designed to protect sensitive electronics Low Channel Input Capacitance from the damage due to ESD. The combination of small size and high Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ESD surge capability makes it ideal for use in portable applications Halogen and Antimony Free. Green Device (Note 3) such as cellular phones, digital cameras and MP3 players. Applications Mechanical Data Case: X3-DFN0603-2 Cellular Handsets Case Material: Molded Plastic, Green Molding Compound Portable Electronics Computers and Peripheral UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin over Copper Leadframe, Solderable e3 per MIL-STD-202, Method 208 Weight: 0.0002 grams (Approximate) X3-DFN0603-2 Device Schematic Top View Bottom View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0Q1B2LP3-7 Standard 8 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0Q1B2LP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 3 A 8/20s, per Figure 1 PP ESD Protection Contact Discharge V 15 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge V 17 kV IEC 61000-4-2 Standard ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 5.5 V V RWM Channel Leakage Current (Note 6) 10 100 nA I V = 5V RM RWM 7.0 9.0 I = 1A, tp = 8/20S, Figure 1 PP Clamping Voltage, Positive Transients V V CL 9.0 11.0 I = 3A, tp = 8/20S, Figure 1 PP Breakdown Voltage V 6 7 8 V I = 1mA BR R Channel Input Capacitance C 6 8 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at