D60V0L4B10LP-7 Diodes Incorporated

D60V0L4B10LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V I C IEC 61000-4-2 (ESD):8kV (Contact) RWM (Max) PP (Max) T (Typ) 60V 2A 10pF IEC 61000-4-2 (ESD):8kV (Air) 4 Channel of ESD Protection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) The D60V0L4B10LP is a high performance device suitable for protecting four high speed I/Os. These devices are assembled in U- Mechanical Data DFN2510-10 package. They have high ESD surge capability and low capacitance. Case: U-DFN2510-10 Case Material: Molded Plastic, Green Molding Compound Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Typically Used at Chip-On-Glass (COG) Panels, VBus Terminals: NiPdAu over Copper Leadframe (Lead Free Plating) Protection, LCD Televisions, Set Top Box e4 Solderable per MIL-STD-202, Method 208 Weight: 0.038 grams (Approximate) 10 9 8 7 6 1 2 3 4 5 Pin Configuration (Top View) Schematic Diagram Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D60V0L4B10LP-7 Standard QD4 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D60V0L4B10LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Standard IEC 61000-4-2 ESD Contact Discharge V 8 kV ESD Standard IEC 61000-4-5,8/20s Peak Pulse Current I 2 A PP Operating Temperature Range T -40 to +125 C OP Storage Temperature Range T -65 to +150 C STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) 350 mW P D Thermal Resistance, Junction to Ambient Typical (Note 5) R 360 C/W JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 60 V V RWM Channel Leakage Current (Note 6) I 100 nA V = 60V RM RWM Clamping Voltage, Positive Transients V 115 125 V I = 2A, tp = 8/20s CL PP Breakdown Voltage V 65 75 85 V I = 1mA BR R Channel Input Capacitance C 10 12 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at