D6V3H1U2LP16 1 CHANNEL HIGH SURGE TVS DIODE Product Summary Features V I C BR (Min) PP (Max) T (Typ) Provides ESD Protection per IEC 61000-4-2 Standard: 6.5V 90A 800pF Air 30kV, Contact 30kV One Channels of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications Mechanical Data such as cellular phones, digital cameras, and MP3 players. Case: U-DFN1610-2 (Type B) Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Cellular Handsets Moisture Sensitivity: Level 1 per J-STD-020 Portable Electronics Terminals: NiPdAu over Copper Leadframe. Solderable per Computers and Peripheral MIL-STD-202, Method 208 e4 Weight: 0.003 grams (Approximate) Pin 2 Pin 1 Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D6V3H1U2LP16-7 Standard CE 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D6V3H1U2LP16 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current 90 A 8/20s (Note 7) I PP ESD Protection Contact Discharge 30 kV Standard IEC 61000-4-2 V ESD CONTACT ESD Protection Air Discharge 30 kV Standard IEC 61000-4-2 V ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 500 mW D 250 C/W Thermal Resistance, Junction to Ambient, T = +25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 6.3 V V RWM Channel Leakage Current (Note 6) I 500 nA V = 6.3V R R Reverse Breakdown Voltage V 6.5 9 V I = 1mA BR R 8.7 V I = 10A, t = 8/20s PP p Clamping Voltage, Positive Transients (Note 7) V 9.5 V I = 50A, t = 8/20s C PP p 11.5 V IPP = 90A, tp = 8/20s V = 0V, f = 1MHz, Any I/O to R Channel Input Capacitance (Note 8) C 800 pF T GND Dynamic Resistance 0.05 TLP, 10A, tp = 100ns R DYN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at