D6V3S1U2LP 1 CHANNEL UNIDIRECTIONAL TVS Product Summary Features Low Profile Package (0.50mm Typical) and Ultra-Small PCB V I C BR (Min) PP (Max) T (Typ) Footprint Area (1.1mm 0.7mm Max) Suitable for Compact 6.5V 50A 255pF Portable Electronics One Channel of ESD and Surge Protection Provides ESD Protection per IEC 61000-4-2 Standard: Air 30kV, Contact 30kV Provides Surge and Lightning Protection per IEC 61000-4-5 Description Standard: I Max 50A PP Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD and Surge. The combination of small For automotive applications requiring specific change size and high ESD surge capability makes it ideal for use in portable control (i.e. parts qualified to AEC-Q100/101/200, PPAP applications such as cellular phones, digital cameras, and MP3 capable, and manufactured in IATF 16949 certified facilities), players. please contact us or your local Diodes representative. D6V3S1U2LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 575 W 8/20s, per Figure 3 PP Peak Pulse Current I 50 A 8/20s, per Figure 3 PP ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard ESD CONTACT ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard VESD AIR Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage V 6.3 V RWM Reverse Current (Note 6) I 1.0 A V = V = 6.3V R R RWM Reverse Breakdown Voltage 6.5 9 V VBR IR = 1mA 8.0 IPP = 10A, tP = 8/20s Reverse Clamping Voltage (Note 7) V V CL 11.5 IPP = 50A, tP = 8/20s 7.3 IPP = 4A, tP = 10/100ns ESD Clamping Voltage (Note 8) V V C 8.0 IPP = 16A, tP = 10/100ns Capacitance C 255 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at