D7V0M1U2S9 SURFACE MOUNT UNIDIRECTIONAL TVS DIODE Product Summary Features V Min I Max C Typ BR pp in Provides ESD Protection per IEC 61000-4-2 Standard: 7.5V 7A 45pF Air 30kV, Contact 30kV One Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Mechanical Data Applications Cellular Handsets Case: SOD923 Portable Electronics Case Material: Molded Plastic, Green Molding Compound. Computers and Peripheral UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (Approximate) SOD923 Pin 2 Pin 1 Device Schematic Top View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D7V0M1U2S9-7 Standard TF 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D7V0M1U2S9 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 90 W 8/20s, per Figure 3 PP Peak Pulse Current I 7.0 A 8/20s, per Figure 3 PP ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 7 V RWM Channel Leakage Current (Note 6) I 1.0 A V = 7V RM RWM Clamping Voltage, Positive Transients V 13 V I = 7A, t = 8/20S CL PP p Breakdown Voltage V 7.5 V I = 1mA BR R Channel Input Capacitance C 45 pF V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at