DCX100NS 100mA DUAL PRE-BIASED TRANSISTORS General Descriptions DCX100NS is best suited for applications where the load needs to be turned on and off using control circuits like micro-controllers, comparators etc. particularly at a point of load. It features a discrete PNP pass transistor which can support continuous maximum current up to 100 mA. It also contains an NPN transistor which can be used as a control switch and can also be biased using higher supply. The component devices can be used as part of a circuit or as stand alone discrete devices. Features SOT-563 Built in Biasing Resistors Epitaxial Planar Die Construction Lead Free By Design/ROHS Compliant (Note 1) Gree Device (Note 2) Ideally Suited for Automated Assembly Processes Mechanical Data Case: SOT-563 Case Material: Molded Plastic.Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Schematic and Pin Configuration Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.0035 grams (approximate) Reference Device Type R1 (NOM) R2 (NOM) R3, R4 (NOM) Q1 PNP 1K 10K Q2 NPN 10K Maximum Ratings: Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 3) P 150 mW D Collector Current (using PNP as Pass Transistor) I 100 mA C(max) Thermal Resistance, Junction to Ambient Air (Note 3) 833 R C/W JA Operating and Storage Junction Temperature Range T , T -55 to +150 C J STG Sub-Component Device - Pre-Biased PNP Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage -50 V V cc Input Voltage +5 to -10 V V in Output Current I -100 mA c Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Sub-Component Device - Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V 50 V cc Input Voltage -10 to +40 V V in Output Current 50 mA I O Electrical Characteristics: Pre-Biased PNP Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition V -0.3 V V = -5V, I = -100uA I(off) CC O Input Voltage -3.0 V V V = -0.3V, I = -20mA I(on) O O Output Voltage 0.1 -0.3 V V I /I = -10mA /-0.5mA O(on) O I Input Current I -7.2 mA V = -5V I I Output Current I -0.5 uA V = -50V, V = 0V O(off) CC I DC Current Gain G 33 V = -5V, I = -5mA I O O Input Resistor Tolerance -30 +30 % R1 Resistance Ratio Tolerance R2/R1 0.8 1 1.2 % V = -10V, I = -5mA, CE E Gain-Bandwidth Product f 250 MHz T f = 100 MHz Electrical Characteristics: Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition V 0.5 1.18 V V = 5V, I = 100uA I(off) CC O Input Voltage V 1.85 3 V V = 0.3V, I = 10mA I(on) O O Output Voltage 0.1 0.3 V V I /I = 10mA / 0.5mA O(on) O I Input Current 0.88 mA I V = 5V I I Output Current 0.5 uA I V = 50V, V = 0V O(off) CC I DC Current Gain G 30 V = 5V, I = 5mA I O O Input Resistor Tolerance R1 -30 +30 % Resistor Ratio Tolerance R2/R1 0.8 1 1.2 V = 10V, I = 5mA, CE E Gain-Bandwidth Product f 250 MHz T f = 100 MHz Typical Characteristics T = 25C unless otherwise specified A 250 200 150 100 50 0 -50 050 100 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Derating Curve (Total Device) DS30761 Rev. 6 - 2 2 of 6 DCX100NS Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D