PART OBSOLETE CONTACT US DCX4710H 100mA DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS General Description DCX4710H is best suited for applications where the load needs to be turned on and off using micro-controllers, comparators or other control circuits, particularly at a point of load. It features a discrete pre-biased PNP transistor which can support continuous maximum current of 100 mA. It also contains a pre-biased NPN transistor which can be used as a control and can be biased using a higher supply. The component devices can be used as a part of circuit or as stand alone discrete devices. Features SOT-563 Built in Biasing Resistors Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Mechanical Data Case: SOT-563 Case Material: Molded Plastic.Green Moldin Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 7 Ordering Information: See Page 7 Schematic and Pin Configuration Weight: 0.005 grams (approximate) Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) R4 (NOM) Q1 PNP 10K 47K Q2 NPN 10K 10K Maximum Ratings: Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Output Current 100 mA I out Power Dissipation (Note 3) 150 mW P d Power Derating Factor above 45C 1.43 mW/C P der Junction Operation and Storage Temperature Range -55 to +150 C P d Thermal Resistance, Junction to Ambient Air (Note 3) 833 C/W R JA (Equivalent to one heated junction of PNP transistor) T = 25C A Notes: 1. No purposefully added lead. 2 . Diodes Inc. sGree policy can be found on our website at DCX4710H Sub-Component Device Pre-Biased PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Supply Voltage V -50 V CC Input Voltage V +6 to -40 V IN Output Current (dc) I -100 mA C(max) Sub-Component Device Pre-Biased NPN Transistor (Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Supply Voltage V 50 V CC Input Voltage V -10 to +40 V IN Output Current (dc) I 100 mA C(max) Electrical Characteristics: Pre-Biased PNP Transistor (Q1) T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Cut Off Current -100 nA I V = -50V, I = 0 CBO CB E Collector-Base Breakdown Voltage -50 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -50 V V I = -4mA, I = 0 (BR)CEO C B Input Off Voltage -0.3 V V V = -5V, I = -100A I(OFF) CE C Output Off Current -0.5 I A V = -50V, V = 0V O(OFF) CC I ON CHARACTERISTICS DC Current Gain 80 h V = -5V, I = -5mA FE CE C Collector-Emitter Saturation Voltage -0.25 V V I = -10mA, I = -0.3mA CE(sat) C B Output On Voltage -0.1 -0.3 V V I /I = -10mA/-0.5mA O(ON) O I Input On Voltage (Load is present) -1.4 -0.9 V V V = -0.3V, I = -2mA I(ON) O C Input Current -0.88 mA I V = -5V I I Input Resistor +/- 30% (Base) R1 7 10 13 K Pull-up Resistor (Base to Vcc supply) R2 32 47 62 K Resistor Ratio (R2/R1) 20 20 % SMALL SIGNAL CHARACTERISTICS V = -10V, I = -5mA, CE E Transition Frequency (gain bandwidth product) 250 MHz f T f = 100MHz *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 2 of 8 June 2021 DCX4710H Diodes Incorporated www.diodes.com Document number: DS30871 Rev. 7 - 4 OBSOLETE PART DISCONTINUED