EMITTER DCX56/-16 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DCX53) Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT89-3L Mechanical Data Case: SOT89-3L 2,4 Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.072 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage V 5 V EBO Collector Current 1 A I C Peak Pulse Current 1.5 A I CM Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A D Operating and Storage Temperature Range -55 to +150 C T , T j STG Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C 125 C/W A R JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage 100 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 80 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5.0 V I = 10A, I = 0 (BR)EBO E C 0.1 V = 30V, I = 0 CB E Collector-Base Cutoff Current I A CBO 20 V = 30V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current 100 nA I V = 5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 63 I = 5.0mA, V = 2.0V C CE DCX56, DCX56-16 40 I = 500mA, V = 2.0V C CE DC Current Gain h FE DCX56 63 250 I = 150mA, V = 2.0V C CE DCX56-16 100 250 I = 150mA, V = 2.0V C CE Collector-Emitter Saturation Voltage V 0.5 V I = 500mA, I = 50mA CE(SAT) C B Base-Emitter Turn-On Voltage V 1.0 V I = 500mA, V = 2.0V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS I = 50mA, V = 5V, C CE Current Gain-Bandwidth Product f 200 MHz T f = 100MHz Output Capacitance 15 pF C V = 10V, I = 0, f = 1MHz obo CB E Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at V , COLLECTOR EMITTER VOLTAGE (V) CE I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C DS31161 Rev. 3 - 2 2 of 4 DCX56/-16 Diodes Incorporated www.diodes.com NEW PRODUCT V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , COLLECTOR EMITTER CE(SAT) V , BASE EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) C SATURATION VOLTAGE (V)