PART OBSOLETE - USE DDA(XXXX)U DDA(XXXX)K PNP PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-26 Complementary NPN Types Available (DDC) Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors Moisture Sensitivity: Level 1 per J-STD-020D Available in Lead Free/RoHS Compliant Version (Note 3) Terminal Connections: See Diagram Part Number R1 R2 Marking Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish annealed DDA124EK 22K 22K P17 over Copper leadframe). Please see Ordering Information, DDA144EK 47K 47K P20 Note 5, on Page 5 DDA114YK 10K 47K P14 Marking Information: See Table and Page 5 DDA123JK P06 2.2K 47K Ordering Information See Page 5 DDA114EK 10K 10K P13 Weight: 0.015 grams (approximate) DDA143TK 4.7K - P07 DDA114TK - P12 10K 6 5 6 5 4 4 R R 1 R 1 2 R R R 2 1 1 2 3 1 2 3 1 Top View R1, R2 Device Schematic R1 only Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (1) to (6) and (4) to (3) V 50 V CC DDA124EK +10 to -40 DDA144EK +10 to -40 DDA114YK +6 to -40 Input Voltage, (2) to (1) and (5) to (4) DDA123JK V +5 to -12 V IN DDA114EK +10 to -40 DDA143TK +5V max DDA114TK +5V max DDA124EK -30 DDA144EK -30 DDA114YK -70 Output Current DDA123JK -100 mA I O DDA114EK -50 DDA143TK -100 DDA114TK -100 Output Current All -100 mA I C(MAX) Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Total) 300 mW P D Thermal Resistance, Junction to Ambient Air (Note 1) 416.7 R C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at DDA(XXXX)K Electrical Characteristics T = 25C unless otherwise specified A Characteristic (DDA143TK & DDA114TK only) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -50 V I = -1mA CEO C Emitter-Base Breakdown Voltage BV -5 V I = -50A EBO E Collector Cutoff Current -0.5 I A V = -50V CBO CB Emitter Cutoff Current -0.5 A I V = -4V EBO EB IC/IB = -2.5mA / -0.25mA DDA143TK Collector-Emitter Saturation Voltage -0.3 V V CE(SAT) I /I = -1mA / -0.1mA DDA114TK C B DC Current Transfer Ratio 100 250 600 h I = -1mA, V = -5V FE C CE -30 +30 % Input Resistor (R ) Tolerance R 1 1 Gain-Bandwidth Product* f 250 MHz V = -10V, I = 5mA, f = 100MHz T CE E Characteristic Symbol Min Typ Max Unit Test Condition DDA124EK -0.5 -1.1 DDA144EK -0.5 -1.1 DDA114YK -0.3 V V = -5V, I = -100A l(OFF) CC O DDA123JK -0.5 DDA114EK -0.5 -1.1 Input Voltage V V = -0.3, I = -5mA -1.9 O O DDA124EK -3.0 DDA144EK -1.9 -3.0 VO = -0.3, IO = -2mA DDA114YK -1.4 V V = -0.3, I = -1mA l(ON) O O DDA123JK -1.1 V = -0.3, I = -5mA O O DDA114EK -1.9 -3.0 V = -0.3, I = -10mA O O I /I = -10mA / -0.5mA O l DDA124EK DDA144EK I /I = -10mA / -0.5mA O l DDA114YK Output Voltage V -0.1 -0.3 V I /I = -5mA / -0.25mA O(ON) O l DDA123JK I /I = -5mA / -0.25mA O l DDA114EK I /I = -10mA / -0.5mA O l DDA124EK -0.36 DDA144EK -0.18 DDA114YK Input Current I -0.88 mA V = -5V l I DDA123JK -3.6 DDA114EK -0.88 Output Current I -0.5 A V = 50V, V = 0V O(OFF) CC I V = -5V, I = -5mA DDA124EK O O 56 V = -5V, I = -5mA DDA144EK 68 O O DC Current Gain DDA114YK 68 G V = -5V, I = -10mA l O O 80 DDA123JK V = -5V, I = -10mA O O DDA114EK 30 V = -5V, I = -5mA O O Input Resistor (R ) Tolerance R -30 +30 % 1 1 Resistance Ratio Tolerance R /R -20 +20 % 2 1 Gain-Bandwidth Product* 250 MHz f V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only 2 of 6 June 2021 DDA(XXXX)K Diodes Incorporated www.diodes.com Document number: DS30349 Rev. 6 - 4 OBSOLETE PART DISCONTINUED