PART OBSOLETE - CONTACT US DDA (LO-R1) U PNP PRE-BIASED DUAL TRANSISTOR Features Epitaxial Planar Die Construction SOT-363 Complementary NPN Types Available (DDC) A Dim Min Max Built-In Biasing Resistors Lead-Free/RoHS Compliant (Note 3) A 0.10 0.30 Gree Device (Note 4 and 5) B 1.15 1.35 B C C 2.00 2.20 Mechanical Data D 0.65 Nominal Case: SOT-363 Case Material: Molded Plastic, Green Molding F 0.30 0.40 Compound. UL Flammability Classification Rating 94V-0 H 1.80 2.20 H Moisture Sensitivity: Level 1 per J-STD-020C J 0.10 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 K K 0.90 1.00 M Lead Free Plating (Matte Tin Finish annealed over L 0.25 0.40 Alloy 42 leadframe). J M 0.10 0.25 Terminal Connections: See Diagram L D F Marking Information: See Page 3 0 8 Type Code: See Table Below All Dimensions in mm Ordering Information: See Page 3 Weight: 0.0058 grams (approximate) 6 5 4 6 5 4 R 1 P/N R1 (NOM) R2 (NOM) Type Code R DDA122LU 0.22K 10K P81 1 R 2 R DDA142JU 0.47K 10K P82 1 DDA122TU 0.22K OPEN P83 R R 2 1 1 2 3 DDA142TU 0.47K OPEN P84 1 2 3 R1 Only R , R 1 2 SCHEMATIC DIAGRAM Maximum Ratings NPN Section T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage (1) to (6) and (4) to (3) -50 V V CC Input Voltage (1) to (2) and (4) to (5) DDA122LU +5 to -6 V V IN DDA142JU +5 to -6 Input Voltage (1) to (2) and (4) to (5) DDA122TU -5 V V EBO (MAX) DDA142TU Output Current All I -100 mA C Power Dissipation (Note 2) P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 2) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at DDA (LO-R1) U Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDA122LU -0.3 V V V = -5V, I = -100A l(off) CC O DDA142JU -0.3 Input Voltage DDA122LU -2.0 V = -0.3V, I = -20mA O O V V l(on) DDA142JU -2.0 V = -0.3V, I = -20mA O O Output Voltage V -0.3V V I /I = -5mA/-0.25mA O(on) O l DDA122LU -28 Input Current mA Il VI = -5V DDA142JU -13 Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DDA122LU 56 DC Current Gain G V = -5V, I = -10mA l O O DDA142JU 56 Gain-Bandwidth Product* 200 MHz f V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1 Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage -40 V BV I = -1mA CEO C DDA122TU I = -50A E Emitter-Base Breakdown Voltage BV -5 V EBO DDA142TU I = -50A E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDA122TU -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDA142TU -0.5 Collector-Emitter Saturation Voltage V -0.3 V I = -5mA, I = -0.25mA CE(sat) C B DDA122TU 100 250 600 DC Current Transfer Ratio h I = -1mA, V = -5V FE C CE DDA142TU 100 250 600 Gain-Bandwidth Product* 200 MHz f V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only 250 200 150 100 50 R = 625 C/W JA 0 -50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Derating Curve (150mW per element must not be exceeded) 2 of 4 June 2021 DDA (LO-R1) U Diodes Incorporated www.diodes.com Document number: DS30423 Rev. 8 - 4 OBSOLETE PART DISCONTINUED P , POWER DISSIPATION (mW) d