DDC144NS DUAL NPN PRE-BIASED TRANSISTOR General Descriptions DDC144NS features discrete dual NPN transistors that can support continuous maximum current up to 100 mA. It is suited for applications where the load needs to be turned on and off using circuits like micro-controllers, comparators, etc., particularly at a point of load. The component devices can be used as a part of a circuit or as a stand alone discrete device. Features Epitaxial Planar Die Construction Fig. 1: SOT-363 Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Mechanical Data Case: SOT-363 Case Material: Molded Plastic.Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Figure 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Fig. 2: Schematic and Pin Configuration Weight: 0.0065 grams (approximate) Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 3) 200 mW P d Thermal Resistance, Junction to Ambient Air (Note 3) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Collector Current 100 mA I (max) C Maximum Ratings: Sub-Component Device - Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage V 50 V cc Input Voltage V -10 to +40 V in Output Current Io 100 mA Electrical Characteristics: Pre-Biased NPN Transistor T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition V 0.5 1.1 V V = 5V, I = 100uA I(off) cc O Input Voltage V 1.5 3 V V = 0.3V, I = 2mA I(on) O O Output Voltage V 0.1 0.3 V I /I = 10mA/0.5mA O(on) O I Input Current I 0.18 mA V = 5V I I Output Current 0.5 uA I V = 50V, V = 0V O(off) cc I DC Current Gain 100 G V = 5V, I = 5mA I O O Input Resistor (R1) Tolerance R1 -30 +30 % Resistance Ratio Tolerance R2/R1 -20 +20 % Gain-Bandwidth Product f 250 MHz V = 10V, I = 5mA, f = 100 MHz T CE E Notes: 1. No purposefully added lead. 2 . Diodes Inc. sGree policy can be found on our website at Typical Characteristics of NPN Transistor T = 25C unless otherwise specified A 250 0.08 0.07 200 0.06 0.05 150 0.04 100 0.03 0.02 50 0.01 0 0 -50 050 100 150 0 0.2 0.4 0.6 0.8 1.2 1.8 2 1 1.4 1.6 T , AMBIENT TEMPERATURE (C) V , COLLECTOR EMITTER VOLTAGE (V) A CE Fig. 3 Derating Curve Fig. 4 Typical V vs. I CE C 450 450 T = 150C A 400 V = 5V 400 CE 350 T = 125C 350 A T = 85C 300 A 300 250 250 T = 25C A 200 200 150 150 T = -55C A 100 100 50 50 0 0 0.1 1 10 100 1,000 1,000 0.1 1 10 100 I COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (mA) C Fig. 5 Typical DC Current Gain Fig. 6 Typical DC Current Gain 100 100 I/I =10 cb 10 10 1 1 T = 150 C A 0.1 0.1 0.01 0.01 100 1,000 0.1 1 10 0.11100 10 1,000 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (mA) C Fig. 8 Typical V vs. I CE(SAT) C Fig. 7 Typical V vs. I CE(SAT) C DS30747 Rev. 6 - 2 2 of 4 DDC144NS Diodes Incorporated www.diodes.com V, COLLECTOR VOLTAGE(V) CE(SAT) P , POWER DISSIPATION (mW) D h , DC CURRENT GAIN FE V, COLLECTOR VOLTAGE (V) h, DC CURRENT GAIN CE(SAT) FE I, COLLECTOR CURRENT (A) C