X-On Electronics has gained recognition as a prominent supplier of DDC144TH-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDC144TH-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DDC144TH-7-F Diodes Incorporated

DDC144TH-7-F electronic component of Diodes Incorporated
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Part No.DDC144TH-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Diodes Incorporated Bipolar Transistors - Pre-Biased 47kOhm NPN Dual Trans 200mW
Datasheet: DDC144TH-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0916 ea
Line Total: USD 274.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
128040
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1207

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Channel Mode
Pd - Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DDC144TH-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDC144TH-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDC144TH NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT563 Nominal 47k Built-In Biasing Resistor Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony FreeGree Device (Note 3) Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) SOT563 4 6 5 R 1 R 1 2 3 1 Device Schematic Top View Ordering Information (Notes 3 & 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel DDC144TH-7-F Standard N21 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DDC144TH Absolute Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Supply Voltage 50 V V CC Input Voltage V -10 to +40 V IN Output Current I 100 mA C(MAX) Thermal Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Notes 5 & 6) P 150 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 833 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 50 V I = 50A CBO C Collector-Emitter Breakdown Voltage BV 50 V I = 1mA CEO C Emitter-Base Breakdown Voltage 5 V BV I = 50A EBO E Collector Cutoff Current 0.5 A I V = 50V CBO CB Emitter Cutoff Current 0.5 A I V = 4V EBO EB Collector-Emitter Saturation Voltage V 0.3 V I /I = 1mA / 0.1mA CE(sat) C B DC Current Transfer Ratio h 100 250 600 I = 1mA, V = 5V FE C CE Input Resistor (R1) R 32.9 47 61.1 k 1 Gain-Bandwidth Product (Note 7) 250 MHz fT VCE = 10V, IE = -5mA, f = 100MHz Notes: 5. Mounted on FR4 PC Board with minimum recommended pad layout. 6. 200mW per element must not be exceeded. 7. Transistor - For Reference Only 2 of 5 DDC144TH December 2014 Diodes Incorporated www.diodes.com Document number: DS37170 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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