DDC144TU DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR General Description DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be used as a control and also these can be biased using higher supply voltages due to the built in current limiting base resistor of 47 K Ohm. The component devices can be used as a part of a circuit or as a stand alone discrete device. Fig. 1: SOT-363 Features Built in Base Resistors Epitaxial Planar Die Construction CQ1 BQ2 EQ2 Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) Mechanical Data R2 47k DDC144T DIE Case: SOT-363 Q2 Case Material: Molded Plastic.Green Moldin DDC144T DIE Q1 Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C R1 47k Terminal Connections: See Fig. 2 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking & Type Code Information: See Page 5 BQ1 CQ2 EQ1 Ordering Information: See Page 5 Weight: 0.015 grams (approximate) Fig. 2: Schematic and Pin Configuration Sub-Component P/N Reference Device Type R1 (NOM) R2 (NOM) Figure DDTC144T DIE Q1 NPN 47K 2 DDTC144T DIE Q2 NPN 47K 2 Maximum Ratings: Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation 200 mW P d 1.6 Power Deration above 25C P mW / C der Output Current 100 mA I out Thermal Characteristics Characteristic Symbol Value Unit Junction Operation and Storage Temperature Range -55 to +150 T , T C J STG Thermal Resistance, junction to ambient (packaged device) 625 C/W R JA (Ref: equivalent to only one heated junction) T = 25C A Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at http:/www.diodes.com/products/lead free/index.php. 3. Device mounted on FR-4 PCB, 1 x 0.85 x 0.062 pad layout as shown on Page 5 or see Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http:/www.diodes.com/datasheets/ap02001.pdf. DS30767 Rev. 7 - 2 1 of 6 DDC144TU Diodes Incorporated www.diodes.com NEW PRODUCT Maximum Ratings: Sub-Component Device: Discrete NPN Transistor (Q1, Q2) T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 50 V V CBO Collector-Emitter Voltage 50 V V CEO Emitter-Base Voltage 6 V V EBO Collector Current (dc) 50 mA I C(max) Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics Collector-Base Cut Off Current 100 nA I V = 50V, I = 0 CBO CB E 500 nA Collector-Emitter Cut Off Current, I I V = 50V, I = 0 O(OFF) CEO CE B Emitter-Base Cut Off Current 500 nA I V = 5V, I = 0 EBO EB C Collector-Base Breakdown Voltage 50 V V I = 50uA, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 50 V V I = 1 mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6 V V I = 50uA, I = 0 (BR)EBO E C Output Voltage (Transistor is off) 4.6 4.45 V V V = 5V, V = 0.05V, R = 1K OH CC B L Input Voltage (load is off) 0.6 0.4 V V = 5V, I = 100uA I(OFF) CE C 850 nA Output Current (leakage same as I) I V = 50V, V = 0V CEO O(OFF) CC I On Characteristics* 0.03 0.1 V I = 2.5 mA, I = 0.25 mA C B 0.075 0.1 V I = 10mA, I = 0.5mA C B Collector-Emitter Saturation Voltage V CE(SAT) 0.05 0.1 V I = 10mA, I = 1mA C B 0.2 0.3 V I = 50mA, I = 5mA C B 150 400 V = 5V, I = 1 mA CE C 150 400 V = 5V, I = 10 mA CE C DC Current Gain h 150 350 V = 5V, I = 25 mA FE CE C 150 300 V = 5V, I = 50 mA CE C 50 110 V = 5V, I = 100 mA CE C Output Voltage (equivalent to V or V ) V 0.2 0.25 Vdc V = 5V, V = 2.5V, R =10K CE(SAT) O(on) OL CC B L Input Voltage V 1.5 0.95 Vdc V = 0.3V, I = 2mA I(ON) O C Input Current I 19.2 28 mA V = 5V i I Base-Emitter Turn-on Voltage V 1.2 V V = 5V, I = 2mA BE(ON) CE C Base-Emitter Saturation Voltage V 1.6 V I = 200uA, I = 20uA BE(SAT) C B Input Resistor +/- 30% (Base) R1 47 K Small Signal Characteristics Transition Frequency (gain-bandwidth product) f 250 MHz V = 10V, I = 5mA, f =100MHz T CE E Collector Capacitance, (Ccbo-Output Capacitance) C 5 pF V = 10V, I = 0, f = 1MHz C CB E *Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02 DS30767 Rev. 7 - 2 2 of 6 DDC144TU Diodes Incorporated www.diodes.com NEW PRODUCT