X-On Electronics has gained recognition as a prominent supplier of DDTA114GCA-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDTA114GCA-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DDTA114GCA-7-F Diodes Incorporated

DDTA114GCA-7-F electronic component of Diodes Incorporated
DDTA114GCA-7-F Diodes Incorporated
DDTA114GCA-7-F Bipolar Transistors - Pre-Biased
DDTA114GCA-7-F  Semiconductors

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See Product Specifications
Part No. DDTA114GCA-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 200MW 10K
Datasheet: DDTA114GCA-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0273 ea
Line Total: USD 163.8 
Availability - 305550
Ship by Fri. 04 Apr to Thu. 10 Apr
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
305550
Ship by Fri. 04 Apr to Thu. 10 Apr
MOQ : 6000
Multiples : 3000
6000 : USD 0.0273

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Transistor Polarity
Mounting Style
Package / Case
Collector- Emitter Voltage VCEO Max
Peak DC Collector Current
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We are delighted to provide the DDTA114GCA-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDTA114GCA-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDTA (R2-ONLY SERIES) CA PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C SOT-23 Built-In Biasing Resistor, R2 only Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW Dim Min Max B CGree Device (Notes 2 and 3) A 0.37 0.51 Qualified to AEC-Q101 Standards for High Reliability B E B 1.20 1.40 D E C 2.30 2.50 G H D 0.89 1.03 Mechanical Data E 0.45 0.60 K Case: SOT-23 M G 1.78 2.05 Case Material: Molded Plastic. UL Flammability J L H 2.80 3.00 Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D J 0.013 0.10 Terminal Connections: See Diagram K 0.903 1.10 Terminals: Solderable per MIL-STD-202, Method 208 L 0.45 0.61 Lead Free Plating (Matte Tin Finish annealed over Alloy M 0.085 0.180 42 leadframe). Marking: Date Code and Type Code: See Table Below & 0 8 C Page 4 All Dimensions in mm Ordering Information: See Page 4 B Weight: 0.008 grams (approximate) R 2 P/N R2 (NOM) Type Code E DDTA114GCA 10K P26 DDTA124GCA 22K P27 DDTA144GCA 47K P28 SCHEMATIC DIAGRAM DDTA115GCA P29 100K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage -50 V V CEO Emitter-Base Voltage V -5 V EBO Collector Current I (Max) -100 mA C Power Dissipation P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 1) R 625 C/W JA Operating and Storage and Temperature Range -55 to +150 T , T C J STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -50 V I = -1mA CEO C I = -720A, DDTA114GCA E I = -330A, DDTA124GCA E Emitter-Base Breakdown Voltage BV 5 V EBO I = -160A, DDTA144GCA E I = -72A, DDTA115GCA E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDTA114GCA -300 -580 DDTA124GCA -140 -260 Emitter Cutoff Current I A V = -4V EBO EB DDTA144GCA -65 -130 DDTA115GCA -30 -58 Collector-Emitter Saturation Voltage V -0.3 V I = -10mA, I = -0.5mA CE(sat) C B DDTA114GCA 30 DDTA124GCA 56 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTA144GCA 68 DDTA115GCA 82 Bleeder Resistor (R ) Tolerance R -30 +30 % 2 2 V = -10V, I = 5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only DDTA (R2-ONLY SERIES) CA DS30336 Rev. 7 - 2 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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