DDTA (R2-ONLY SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary NPN Types Available (DDTC) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C Gree Device, (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B E D 0.65 Nominal G Case: SOT-323 E 0.30 0.40 Case Material: Molded Plastic,Gree Molding H Compound, Note 4. UL Flammability Classification G 1.20 1.40 Rating 94V-0 K M H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C J 0.0 0.10 Terminal Connections: See Diagram J Terminals: Solderable per MIL-STD-202, Method 208 K 0.90 1.00 D E L Lead Free Plating (Matte Tin Finish annealed over L 0.25 0.40 Alloy 42 leadframe). C M 0.10 0.18 Marking: Date Code and Type Code, See Page 3 B Type Code: See Table Below 0 8 R 2 Ordering Information: See Page 3 All Dimensions in mm Weight: 0.006 grams (approximate) E SCHEMATIC DIAGRAM P/N R2 (NOM) Type Code 10K DDTA114GUA P26 DDTA124GUA 22K P27 DDTA144GUA P28 47K DDTA115GUA P29 100K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current I (Max) -100 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage -50 V BV I = -1mA CEO C I = -720A, DDTA114GUA E I = -330A, DDTA124GUA E Emitter-Base Breakdown Voltage BV 5 V EBO I = -160A, DDTA144GUA E I = -72A, DDTA115GUA E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDTA114GUA -300 -580 DDTA124GUA -140 -260 Emitter Cutoff Current I A V = -4V EBO EB DDTA144GUA -65 -130 DDTA115GUA -30 -58 Collector-Emitter Saturation Voltage -0.3 V V I = -10mA, I = -0.5mA CE(sat) C B DDTA114GUA 30 DDTA124GUA 56 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTA144GUA 68 DDTA115GUA 82 Bleeder Resistor (R ) Tolerance R -30 +30 % 2 2 V = -10V, I = 5mA, CE E Gain-Bandwidth Product* 250 MHz f T f = 100MHz * Transistor - For Reference Only Typical Curves DDTA114GUA 1 250 I/I = 10 CB 200 75C 0.1 -25C 150 25C 100 0.01 50 0 0.001 -50 050 100 150 10 20 40 0 30 50 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1 Derating Curve Fig. 2 V vs. I CE(SAT) C 1,000 12 V = 10 CE I = 0V E 10 8 100 6 4 2 10 0 025 10 150 2530 110 100 I , COLLECTOR CURRENT (mA) V , REVERSE BIAS VOLTAGE (V) C R Fig. 3 DC Current Gain Fig. 4 Output Capacitance DS30328 Rev. 6 - 2 2 of 3 DDTA (R2-ONLY SERIES) UA Diodes Incorporated www.diodes.com NEW PRODUCT h, DC CURRENT GAIN (NORMALIZED) FE P , POWER DISSIPATION (mW) D V , MAXIMUM COLLECTOR VOLTAGE (V) CE(SAT) C , CAPACITANCE (pF) OB