X-On Electronics has gained recognition as a prominent supplier of DDTA123TCA-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDTA123TCA-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DDTA123TCA-7-F Diodes Incorporated

DDTA123TCA-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.DDTA123TCA-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Diodes Incorporated Bipolar Transistors - Pre-Biased 200MW 2.2K
Datasheet: DDTA123TCA-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0273 ea
Line Total: USD 163.8 
Availability - 66930
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2880
Ship by Mon. 18 Nov to Thu. 21 Nov
MOQ : 10
Multiples : 10
10 : USD 0.0509
100 : USD 0.0417
300 : USD 0.0371
3000 : USD 0.0337
6000 : USD 0.0309
9000 : USD 0.0296

11189
Ship by Fri. 15 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1495
10 : USD 0.1058
100 : USD 0.0541
1000 : USD 0.0483
3000 : USD 0.0356
9000 : USD 0.0333
24000 : USD 0.0287
99000 : USD 0.0276

66930
Ship by Mon. 11 Nov to Fri. 15 Nov
MOQ : 6000
Multiples : 3000
6000 : USD 0.0273

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
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We are delighted to provide the DDTA123TCA-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDTA123TCA-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDTA (R1-ONLY SERIES) CA PNP PRE-BIASED TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 only UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish Matte Tin Plated Leads, Solderable per For automotive applications requiring specific change MIL-STD-202, Method 208 control (i.e. parts qualified to AEC-Q100/101/200, PPAP Weight: 0.008 grams (approximate) certified facilities), capable, and manufactured in IATF 16949 please contact us or your local Diodes representative. DDTA (R1-ONLY SERIES) CA Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current (Max) -100 mA IC Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage -50 V BV I = -1mA CEO C Emitter-Base Breakdown Voltage -5 V BV I = -50A EBO E Collector Cutoff Current I -0.5 A V = -50V CBO CB Emitter Cutoff Current I -0.5 A V = -4V EBO EB I I = -10mA/-1mA DDTA113TCA C/ B I = -5mA/-0.5mA DDTA123TCA IC/ B I I = -2.5mA/-0.25mA DDTA143TCA C/ B I I = -1mA/-0.1mA DDTA114TCA C/ B Collector-Emitter Saturation Voltage V -0.3 V CE(sat) I I = -5mA/-0.5mA DDTA124TCA C/ B I I = -2.5mA/-0.25mA DDTA144TCA C/ B I I = -1mA/-0.1mA DDTA115TCA C/ B I I = -0.5mA/-0.05mA DDTA125TCA C/ B DC Current Transfer Ratio 100 250 600 h I = -1mA, V = -5V FE C CE -30 +30 % Input Resistor (R ) Tolerance R 1 1 V = -10V, I = -5mA, CE E Gain-Bandwidth Product (Note 6) f 250 MHz T f = 100MHz Notes: 5. Mounted on FR4 PC Board with minimum recommended pad layout 6. Transistor - For Reference Only 2 of 5 June 2021 DDTA (R1-ONLY SERIES) CA Diodes Incorporated www.diodes.com Document number: DS30335 Rev. 7 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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