DDTA (R2-ONLY SERIES) KA
PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
A
Epitaxial Planar Die Construction
SC-59
Complementary NPN Types Available (DDTC)
Dim Min Max
Built-In Biasing Resistor, R2 only
A 0.35 0.50
Lead Free/RoHS Compliant (Note 2)
B C
Gree Device Note 3 & 4
B 1.50 1.70
C 2.70 3.00
Mechanical Data
G
D 0.95
Case: SC-59
H
G 1.90
Case Material: Molded Plastic,Gree Molding
Compound, Note 4. UL Flammability Classification
K H 2.90 3.10
M
Rating 94V-0
J 0.013 0.10
Moisture Sensitivity: Level 1 per J-STD-020D
J
K 1.00 1.30
Terminals: Solderable per MIL-STD-202, Method 208
L
D
Lead Free Plating (Matte Tin Finish annealed over
L 0.35 0.55
Copper leadframe).
OUT
M 0.10 0.20
Terminal Connections: See Diagram
3
0 8
Marking Information: See Table Below & Page 3
C
Ordering Information: See Page 3 All Dimensions in mm
B
Weight: 0.008 grams (approximate)
R2
E
P/N R2 (NOM) Type Code
P26 1 2
10K
DDTA114GKA
P27
DDTA124GKA 22K
GND(+)
IN
DDTA144GKA P28
47K Schematic and Pin Configuration
DDTA115GKA
100K
P29
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -50 V
CBO
Collector-Emitter Voltage -50 V
V
CEO
Emitter-Base Voltage V -5 V
EBO
Collector Current -100 mA
I (Max)
C
Power Dissipation P 200 mW
d
Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Notes: 1. Mounted on FR4 PC Board with recommended pad layout at
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV -50 V I = -50A
CBO C
Collector-Emitter Breakdown Voltage BV -50 V I = -1mA
CEO C
I = -720A, DDTA114GKA
E
I = -330A, DDTA124GKA
E
Emitter-Base Breakdown Voltage BV 5 V
EBO
I = -160A, DDTA144GKA
E
I = -72A, DDTA115GKA
E
Collector Cutoff Current -0.5
I A V = -50V
CBO CB
DDTA114GKA -300 -580
DDTA124GKA -140 -260
Emitter Cutoff Current
I A V = -4V
EBO EB
DDTA144GKA -65 -130
DDTA115GKA -30 -58
Collector-Emitter Saturation Voltage V -0.3 V I = -10mA, I = -0.5mA
CE(sat) C B
DDTA114GKA 30
DDTA124GKA 56
DC Current Transfer Ratio h I = -5mA, V = -5V
FE C CE
DDTA144GKA 68
DDTA115GKA 82
Bleeder Resistor (R ) Tolerance R -30 +30 %
2 2
Gain-Bandwidth Product* f 250 MHz V = -10V, I = 5mA, f = 100MHz
T CE E
* Transistor - For Reference Only
Typical Curves DDTA114KA
250 1
I/I = 10
CB
200
75C
0.1
150 -25C
25C
100
0.01
50
0
0.001
-50 050 100 150
0 10 20 30 40 50
T , AMBIENT TEMPERATURE (C)
A
I , COLLECTOR CURRENT (mA)
C
Fig. 1 Derating Curve
Fig. 2 V vs. I
CE(SAT) C
1,000 12
f = 1MHz
10
8
100 6
4
2
10 0
110 100
0 5 10 15 20 25 30
I , COLLECTOR CURRENT (mA)
C
V , REVERSE BIAS VOLTAGE (V)
R
Fig. 3 DC Current Gain
Fig. 4 Output Capacitance
DS30344 Rev. 8 - 2 2 of 3 DDTA (R2-ONLY SERIES) KA
Diodes Incorporated
www.diodes.com
h, DC CURRENT GAIN
FE
P , POWER DISSIPATION (mW)
D
V, COLLECTOR EMITTER VOLTAGE (V)
C , CAPACITANCE (pF) CE(SAT)
OB