DDTA DDTA (LO-R1)(LO-R1) E E PNP PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Types Available Dim Min Max Typ (DDTC) A 0.15 0.30 0.22 Built-In Biasing Resistors TOP VIEW B C B 0.75 0.85 0.80 Lead Free/RoHS Compliant (Note 2) C 1.45 1.75 1.60 Gree Device (Note 3 and 4) D 0.50 G G 0.90 1.10 1.00 Mechanical Data H H 1.50 1.70 1.60 J 0.00 0.10 0.05 Case: SOT-523 K M K 0.60 0.80 0.75 Case Material: Molded Plastic. UL Flammability N Classification Rating 94V-0 L 0.10 0.30 0.22 Moisture Sensitivity: Level 1 per J-STD-020C J M 0.10 0.20 0.12 L D Terminals: Finish Matte Tin Solderable per MIL-STD 202, N 0.45 0.65 0.50 Method 208 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy All Dimensions in mm 42 leadframe) Terminal Connections: See Diagram OUT Marking Information: See Table Below & Page 3 3 Ordering Information: See Page 3 C Weight: 0.002 grams (approximate) R1 B R2 P/N R1 (NOM) R2 (NOM) Type Code E DDTA122LE 0.22K 10K P81 DDTA142JE 0.47K P82 10K 1 2 DDTA122TE 0.22K OPEN P83 IN GND(+) DDTA142TE OPEN P84 0.47K Schematic and Pin Diagram Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (2) to (3) -50 V V CC Input Voltage, (1) to (2) DDTA122LE +5 to -6 V V IN DDTA142JE +5 to -6 Input Voltage, (2) to (1) DDTA122TE V -5 V EBO (MAX) DDTA142TE Output Current All I -100 mA C Power Dissipation (Note 1) P 150 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTA122LE -0.3 V V V = -5V, I = -100A l(off) CC O DDTA142JE -0.3 Input Voltage DDTA122LE -2.0 V = -0.3V, I = -20mA O O V V l(on) DDTA142JE -2.0 V = -0.3V, I = -20mA O O Output Voltage -0.3V V V I /I = -5mA/-0.25mA O(on) O l DDTA122LE -28 Input Current mA I V = -5V l I DDTA142JE -13 Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DDTA122LE 56 DC Current Gain G V = -5V, I = -10mA l O O DDTA142JE 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage BV -40 V I = -1mA CEO C Emitter-Base Breakdown Voltage DDTA122TE I = -50A E -5 V BV EBO DDTA142TE I = -50A E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDTA122TE -0.5 Emitter Cutoff Current I A V = -4V EBO EB DDTA142TE -0.5 Collector-Emitter Saturation Voltage -0.3 V V I = -5mA, I = -0.25mA CE(sat) C B DDTA122TE 100 250 600 DC Current Transfer Ratio h I = -1mA, V = -5V FE C CE DDTA142TE 100 250 600 Gain-Bandwidth Product* f 200 MHz V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only 250 200 150 100 50 0 -50 050 100 150 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Derating Curve DDTA (LO-R1) E DS30405 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (mW) d