DDTA DDTA (R1-ONLY SERIES)(R1-ONLY SERIES) E E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) C Built-In Biasing Resistor, R1 only SOT-523 Lead Free/RoHS Compliant (Note 2) B C TOP VIEW Gree Device (Note 3 and 4) Dim Min Max Typ B E A 0.15 0.30 0.22 Mechanical Data G B 0.75 0.85 0.80 H Case: SOT-523 C 1.45 1.75 1.60 Case Material: Molded Plastic. UL Flammability K Classification Rating 94V-0 M D 0.50 N Moisture Sensitivity: Level 1 per J-STD-020C G 0.90 1.10 1.00 Terminals: Solderable per MIL-STD-202, Method 208 J L D H 1.50 1.70 1.60 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). J 0.00 0.10 0.05 Terminal Connections: See Diagram K 0.60 0.80 0.75 Marking & Date Code Information: See Diagrams & Page 4 L 0.10 0.30 0.22 Ordering Information: See Page 4 M 0.10 0.20 0.12 Weight: 0.002 grams (approximate) C N 0.45 0.65 0.50 R 1 B 0 8 P/N R1 (NOM) MARKING 1K DDTA113TE P01 All Dimensions in mm 2.2K DDTA123TE P03 E 4.7K DDTA143TE P07 DDTA114TE 10K P12 SCHEMATIC DIAGRAM DDTA124TE P16 22K DDTA144TE P19 47K DDTA115TE P23 100K DDTA125TE P25 200K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current -100 mA I (Max) C Power Dissipation P 150 mW d Thermal Resistance, Junction to Ambient Air (Note 1) R 833 C/W JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage -50 V BV I = -1mA CEO C Emitter-Base Breakdown Voltage -5 V BV I = -50A EBO E Collector Cutoff Current -0.5 I A V = -50V CBO CB Emitter Cutoff Current -0.5 I A V = -4V EBO EB I I = -10mA/-1mA DDTA113TE C/ B I I = -5mA/-0.5mA DDTA123TE C/ B I I = -2.5mA/-.25mA DDTA143TE C/ B I I = -1mA/-.1mA DDTA114TE C/ B Collector-Emitter Saturation Voltage -0.3 V V CE(sat) I I = -5mA/-0.5mA DDTA124TE C/ B I I = -2.5mA/-.25mA DDTA144TE C/ B I I = -1mA/-0.1mA DDTA115TE C/ B I I = -.5mA/-.05mA DDTA125TE C/ B DC Current Transfer Ratio h 100 250 600 I = -1mA, V = -5V FE C CE V = -10V, I = 5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only DDTA (R1-ONLY SERIES) E DS30319 Rev. 6 - 2 2 of 4 Diodes Incorporated www.diodes.com NEW PRODUCT