DDTA (R1-ONLY SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTC) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) Gree Device (Note 3 and 4) B C B 1.15 1.35 C 2.00 2.20 Mechanical Data E B D 0.65 Nominal Case: SOT-323 G E 0.30 0.40 Case Material: Molded Plastic,Gree Molding H Compound, Note 4. UL Flammability Classification G 1.20 1.40 Rating 94V-0 K H 1.80 2.20 Moisture Sensitivity: Level 1 per J-STD-020C M J 0.0 0.10 Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 K 0.90 1.00 J D E L Lead Free Plating (Matte Tin Finish annealed over L 0.25 0.40 Alloy 42 leadframe). C R 1 M 0.10 0.18 Marking Information: See Page 3 B Type Code: See Table Below 0 8 Ordering Information: See Page 3 All Dimensions in mm Weight: 0.006 grams (approximate) E P/N R1 (NOM) Type Code SCHEMATIC DIAGRAM 1K DDTA113TUA P01 2.2K DDTA123TUA P03 DDTA143TUA 4.7K P07 DDTA114TUA 10K P12 DDTA124TUA 22K P16 DDTA144TUA P19 47K DDTA115TUA P23 100K DDTA125TUA P25 200K Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage -50 V V CEO Emitter-Base Voltage -5 V V EBO Collector Current I (Max) -100 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout as shown on Diodes Inc., suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV -50 V I = -50A CBO C Collector-Emitter Breakdown Voltage -50 V BV I = -1mA CEO C Emitter-Base Breakdown Voltage -5 V BV I = -50A EBO E Collector Cutoff Current I -0.5 A V = -50V CBO CB Emitter Cutoff Current I -0.5 A V = -4V EBO EB I I = -10mA/-1mA DDTA113TUA C/ B I I = -5mA/-0.5mA DDTA123TUA C/ B I I = -2.5mA/-.25mA DDTA143TUA C/ B I I = -1mA/-.1mA DDTA114TUA C/ B Collector-Emitter Saturation Voltage V -0.3 V CE(sat) I I = -5mA/-0.5mA DDTA124TUA C/ B I I = -2.5mA/-.25mA DDTA144TUA C/ B I I = -1mA/-0.1mA DDTA115TUA C/ B I I = -.5mA/-.05mA DDTA125TUA C/ B DC Current Transfer Ratio h 100 250 600 I = -1mA, V = -5V FE C CE Input Resistor (R ) Tolerance R -30 +30 % 1 1 V = -10V, I = 5mA, CE E Gain-Bandwidth Product* f 250 MHz T f = 100MHz * Transistor - For Reference Only Typical Curves DDTA114TUA 250 1 I/I = 10 CB 200 25C 0.1 -25C 150 75C 100 0.01 50 0 0.001 -50 10 20 40 050 100 150 0 30 50 I , COLLECTOR CURRENT (mA) T , AMBIENT TEMPERATURE (C) C A Fig. 2 V vs. I Fig. 1 Derating Curve CE(SAT) C 1,000 12 V = 10 CE I = 0V E 10 100 8 6 10 4 2 1 0 051105 20 25 30 110 100 V , REVERSE BIAS VOLTAGE (V) I , COLLECTOR CURRENT (mA) R C Fig. 4 Output Capacitance Fig. 3 DC Current Gain DS30327 Rev. 6 - 2 2 of 3 DDTA (R1-ONLY SERIES) UA Diodes Incorporated www.diodes.com NEW PRODUCT h, DC CURRENT GAIN (NORMALIZED) P , POWER DISSIPATION (MILLIWATTS) FE D V, MAXIMUM COLLECTOR VOLTAGE (V) CE(SAT) C , CAPACITANCE (pF) OB