DDTB (xxxx) UDDTB (xxxx) U PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary NPN Types Available (DDTD) Dim Min Max Built-In Biasing Resistors, R1, R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 Gree Device (Note 3 and 4) B C C 2.00 2.20 Mechanical Data D 0.65 Nominal Case: SOT-323 E 0.30 0.40 G Case Material: Molded Plastic,Gree Molding G 1.20 1.40 H Compound, Note 4. UL Flammability Classification Rating 94V-0 H 1.80 2.20 K Moisture Sensitivity: Level 1 per J-STD-020C M J 0.0 0.10 Terminal Connections: See Diagram K 0.90 1.00 Terminals: Solderable per MIL-STD-202, Method 208 J L 0.25 0.40 Lead Free Plating (Matte Tin Finish annealed over Alloy D E L 42 leadframe). M 0.10 0.18 Marking Code & Date Code Information: See Table 0 8 Below & Page 3 All Dimensions in mm Ordering Information: See Page 3 Weight: 0.006 grams (approximate) OUT 3 P/N R1 (NOM) R2 (NOM) Type Code C DDTB113EU 1K 1K P60 R1 B DDTB123EU 2.2K 2.2K P61 DDTB143EU 4.7K 4.7K P62 R2 DDTB114EU 10K 10K P63 E DDTB122JU 0.22K 4.7K P64 DDTB113ZU 1K 10K P65 1 2 DDTB123YU 2.2K 10K P66 IN GND(+) DDTB133HU 3.3K 10K P67 DDTB123TU 2.2K OPEN P69 Schematic and Pin Configuration DDTB143TU 4.7K OPEN P70 DDTB114TU 10K OPEN P71 DDTB114GU 0 10K P72 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Supply Voltage, (3) to (2) V -50 V CC Input Voltage, (1) to (2) DDTB113EU +10 to -10 DDTB123EU +10 to -12 DDTB143EU +10 to -30 DDTB114EU +10 to -40 V V IN DDTB122JU +5 to -5 DDTB113ZU +5 to -10 DDTB123YU +5 to -12 DDTB133HU +6 to -20 Input Voltage, (2) to (1) DDTB123TU DDTB143TU V -5 V EBO (MAX) DDTB114TU DDTB114GU Output Current All I -500 mA C Power Dissipation P 200 mW d Thermal Resistance, Junction to Ambient Air (Note 1) 625 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Mounted on FR4 PC Board with recommended pad layout at Electrical Characteristics T = 25C unless otherwise specified R1, R2 Types A Characteristic Symbol Min Typ Max Unit Test Condition DDTB113EU -0.5 DDTB123EU -0.5 DDTB143EU -0.5 DDTB114EU -0.5 V V V = -5V, I = -100A l(off) CC O DDTB122JU -0.5 DDTB113ZU -0.3 DDTB123YU -0.3 DDTB133HU -0.3 Input Voltage DDTB113EU -3.0 V = -0.3V, I = -20mA O O DDTB123EU -3.0 V = -0.3V, I = -20mA O O DDTB143EU -3.0 V = -0.3V, I = -20mA O O DDTB114EU -3.0 V = -0.3V, I = -10mA O O V V l(on) DDTB122JU -3.0 V = -0.3V, I = -30mA O O DDTB113ZU -2.0 V = -0.3V, I = -20mA O O DDTB123YU -2.0 V = -0.3V, I = -20mA O O DDTB133HU -2.0 V = -0.3V, I = -20mA O O Output Voltage -0.3V V V I /I = -50mA/-2.5mA O(on) O l DDTB113EU -7.2 DDTB123EU -3.8 DDTB143EU -1.8 DDTB114EU -0.88 Input Current mA I V = -5V l I DDTB122JU -28 DDTB113ZU -7.2 DDTB123YU -3.6 DDTB133HU -2.4 Output Current I -0.5 A V = -50V, V = 0V O(off) CC I DDTB113EU 33 DDTB123EU 39 DDTB143EU 47 DDTB114EU 56 DC Current Gain G V = -5V, I = -50mA l O O DDTB122JU 47 DDTB113ZU 56 DDTB123YU 56 DDTB133HU 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = -5mA, f = 100MHz T CE E * Transistor - For Reference Only Electrical Characteristics T = 25C unless otherwise specified R1-Only, R2-Only Types A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage -40 V BV I = -1mA CEO C I = -50A Emitter-Base Breakdown Voltage DDTB123TU E DDTB143TU I = -50A E BV -5 V EBO DDTB114TU I = -50A E DDTB114GU I = -720A E Collector Cutoff Current I -0.5 A V = -50V CBO CB DDTB123TU -0.5 DDTB143TU -0.5 Emitter Cutoff Current A I V = -4V EBO EB DDTB114TU -0.5 DDTB114GU -580 -300 Collector-Emitter Saturation Voltage -0.3 V V I = -50mA, I = -2.5mA CE(sat) C B DDTB123TU 100 250 600 DDTB143TU 100 250 600 DC Current Transfer Ratio h I = -5mA, V = -5V FE C CE DDTB114TU 100 250 600 DDTB114GU 56 Gain-Bandwidth Product* f 200 MHz V = -10V, I = 5mA, f = 100MHz T CE E * Transistor - For Reference Only DDTD (xxxx) U DS30383 Rev. 6 - 2 2 of 3 Diodes Incorporated www.diodes.com NEW PRODUCT